2-2016

RF & Wireless
Components
Low Profile MEMS Filter Range and
Filters Shortform Catalogue
Euroquartz has launched a new range of
low profile MEMS (Micro ElectroMechanical
System) filter products offering major
benefits of small size and very low profile
making them ideal for use in embedded
applications. The company has also published
a new four page shortform catalogue
covering its new MEMS filters and traditional
RF filter ranges.
Using the latest MEMS technology, it is
possible to produce bandstop and bandpass
filter products that offer a very low
profile (0.5 mm) solution. The advantages
of Euroquartz MEMS filters are their small
size offering high reliability and high performance,
covering the range from 2 to 50
GHz. MEMS filter types available include
bandpass, bandstop, lowpass, attenuator
New 2.4 GHz WLAN/BT LTE
Coexistence Filter
Richardson RFPD Inc. announced the availability
and full design support capabilities
for a new 2.4 GHz WLAN/BT LTE coexistence
filter from Qorvo: The 885128
is a high-performance, high-power bulk
acoustic wave (BAW) band-pass filter with
extremely steep skirts. It simultaneously
exhibits low loss in the WiFi band and high
near-in rejection in the approximate LTE
bands. The new BAW filter is specifically
designed to enable coexistence of WiFi and
LTE signals within the same device or in
close proximity to one another.
chip, time-delay line, substrate integrated
waveguide (SIW) and micro-shielding.
Offering a 1 dB insertion loss with 30 dB
at 3 and 7.5 GHz attenuation they are ideal
for microwave communication equipment
such as base stations, wireless transceiver
systems and small size RF front-end requirements.
The new shortform catalogue provides
basic specifications for a selection
of the MEMS bandpass filters alongside
discrete crystal filter designs, surface mount
monolithic crystal filters and bandpass LC
filter designs.
Euroquartz custom LC and microwave filters
offer a broad selection of frequencies,
topologies and packages ranging from audio
to 3 GHz and up to 200 W in power. Topologies
include low pass, band pass, high
pass and band reject. Special characteristics
such as IM distortion, phase and amplitude
match etc. are optimised during manufacturing.
LC filters are available in a variety
of packages including SMD and are compatible
with modern automated manufacturing
processes.
Euroquartz also offers a wide range of cavity
filters in band pass and notch types. A notch
type filter attenuates a narrow band of frequencies
while allowing all other frequencies
to pass with only a slight loss. Band
pass filters pass a narrow band of frequencies
with very little loss while attenuating
all other signals outside of the band. Cavity
filters are available up to 960 MHz with any
type of customer-specific connector and are
factory tuned to the frequencies requested.
■ Euroquartz Ltd.
www.euroquartz.co.uk
The filter exhibits excellent power handling
capabilities and is offered with an
industry-leading 1.1 x 0.9 x 0.50 mm small
footprint. It is ideally suited for small cell,
portable hotspots, WiFi routers and LTE
gateways, smart meters, and WiFi access
points applications.
■ RFMW Ltd., www.rfmw.com
News
200 mm GaN-on-Si
Technology Closer to
Manufacturing
Imec presented three novel aluminum
gallium nitride (AlGaN)/ gallium
nitride (GaN) stacks featuring optimized
low dispersion buffer designs.
Moreover, imec optimized the epitaxial
p-GaN growth process on 200 mm silicon
wafers, achieving e-mode devices
featuring beyond state-of-the-art high
threshold voltage (Vt) and high drive
current (Id).
To achieve a good, current-collapsefree
device operation in AlGaN/GaNon-Silicon
(Si) devices, dispersion must
be kept to a minimum. Trapped charges
in the buffer between the GaN-based
channel and the silicon substrate are
known to be a critical factor in causing
dispersion. Imec compared the impact
of different types of buffers on dispersion
and optimized three types: a classic
step-graded buffer, a buffer with
low-temperature AlN interlayers, and
a super lattice buffer. These three types
of buffers were optimized for low dispersion,
leakage and breakdown voltage
over a wide temperature range and bias
conditions.
Imec also optimized the epitaxial p-GaN
growth process demonstrating improved
electrical performance of p-GaN
HEMTs, achieving a beyond state-ofthe-art
combination of high threshold
voltage, low on-resistance and high
drive current. The P-GaN HEMT results
outperformed their MISHEMT counterparts.
Imec’s GaN-on-Si R&D program aims at
bringing this technology towards industrialization.
Imec’s offering includes a
complete 200 mm CMOS-compatible
200 V GaN process line that features
excellent specs on e-mode devices.
Imec’s program allows partners early
access to next-generation devices and
power electronics processes, equipment
and technologies, and speed up innovation
at shared costs. Current R&D
focuses on improving the performance
and reliability of imec’s e-mode devices,
while in parallel pushing the boundaries
of the technology through innovation
in substrate technology, higher levels
of integration and exploration of novel
device architectures.
■ Imec
www.imec.be
hf-praxis 2/2016 51