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COST 507 - Repositório Aberto da Universidade do Porto

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700<br />

[53Phi]<br />

800<br />

+[90Kuz21<br />

]iquld<br />

a » » ■* h·^» f t »<br />

(fil)+fil2Cu+(Sl)<br />

0.1 0.2 0.3 04<br />

ujeight fraction Cu A<br />

lueight fraction Si<br />

Fig.9.Isopleth at 1 wt.% Si in the Al­Cu­Si Fig.10. Isopleth at 2 wt.% Cu in the Al­Cu­Si<br />

system.<br />

system.<br />

<br />

0.05 0.10 0.15 0.20 0.25<br />

τ­phase #0·0·0·0·0·<br />

τ'­phase #0·0·0·0·0#<br />

φ Al, Zn, [Va] 0 Cu ' Va 0 V a<br />

Fig. 11. Schematic representation of the atomic occupancy in the τ and τ' phases for the<br />

Al­Cu­Zn system. The direction in the cubic lattice is considered.<br />

0­<br />

r -5<br />

-10<br />

3+x(Cu)­7*x(Sl)=0<br />

A [97Gan],T = 1100 Κ<br />

Q[97Gan),T­970 Κ<br />

900<br />

800<br />

3 700­<br />

600<br />

-15<br />

500<br />

400<br />

Mg2Si+<br />

+CuMg2+T<br />

CuMg2+(Mg)<br />

+Mg2Si<br />

­25<br />

A 0 0.2 0.4 0.6 0.8<br />

mole fraction Mg<br />

Fig. 12.Integral enthalpy of mixing in the<br />

Cu­Mg­Si system.<br />

1.0<br />

A 300<br />

0.2 0.4 0.6 0.8<br />

mole fractionMg<br />

Fig. 13.Isopleth Cu7S¡3+Mg compared with<br />

experimental <strong>da</strong>ta [97Gan].<br />

1.0<br />

­ 81 ­

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