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Comparative study of capacitance of Nano-Scale and Pico-scale-MOSFET K=3.9 to 6.9 K=7.4 to 11.9 To study Cg vs. Cox We have Cg = Cox W L From above plotted graphs, using Cox= 0.08:0.01:0.20; W=2 to 5nm Case 1: taking W in nanometer www.<strong>ijcer</strong>online.com ||May ||2013|| Page 73
Comparative study of capacitance of Nano-Scale and Pico-scale-MOSFET W=2 to 5 pm Case 2: W in picometer CONCLUSION There are a number of issues in scaling MOSFET devices, particularly for the sub-100 nm technology evolution. The most critical issue is the gate dielectric, because very thin gate oxides are required for sub-100 nm generations. For such thin oxides, gate leakage current due to direct tunneling becomes unacceptably large. In order to decrease the leakage current due to tunneling, the physical thickness of the dielectric must increase, while the equivalent oxide thickness must continue to be reduced. Use of alternate gate materials with dielectric constant higher than that of silicon dioxide is the leading projected solution to reduce the gate leakage current to more tolerable levels. Therefore, modeling of the thin oxide related issues, such as gate direct tunneling current, gate capacitance, and capacitance reconstruction are crucial for further gate oxide scaling. ACKNOWLEDGEMENTS On the very outset of this report, we would like to extend our sincere & heartiest obligation towards all the personages who have helped us in this Endeavour. Without their active guidance, help, co-operation & encouragement, we would not have made headway in the project. We would also like to thank Mr. Arindum Mukherjee (HoD i/c, Dept of ECE, CIT Kokrajhar), to give us the chance to do this work and all the staff members of ECE dept. for their motivation, guidance and support throughout the project First and foremost, we would like to thank Mr. Haradhan Chel (Asst. professor, Dept of ECE, CIT Kokrajhar) who instead of his busy schedule, always guided us in the right direction. We were privileged to experience a sustained enthusiastic and involved interest from his side. This fuelled our enthusiasm even further and encouraged us to boldly step into what was a totally dark and unexplored expanse before us. He always fuelled our thoughts to think broad and out of the box. REFERENCES [1] “Modeling of nanoscale mosfets”ChanghoonChoi ,April 2002 [2] H. Iwai, “Current Status and Future of Advanced CMOS Technologies:Digital and Analog Aspects,”1998 [3] R. Viswanathan, and et al.,“CMOSscaling into nanometer regime,”Proceedings of IEEE, Apr. 1997. [4] “International TechnologyRoadmapfor Semiconductors 2000 Edition,”2000. [5] E. J. Lerner, “The End of the Road for Moore’s Law,” Journal of IBM research, 1999. [6] P.A.Packan,“Pushing the Limits,” Sep. 1999 [7] C. Fiegna and A. Abramo “Analysisof Quantum Effects in Nonuniformly Doped MOS Structures,” IEEETrans. Electron Devices, Apr. 1998. [8] H. Iwai, “CMOS Technology – Year2010 and Beyond,” IEEE J. of Solid-StateCircuits, Mar. 1999. www.<strong>ijcer</strong>online.com ||May ||2013|| Page 74
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