3-2021

RF & Wireless
EW Power Amp
spans 2 to 20 GHz
GEN10 LDMOS technology, the
BLM10D3438-70ABG delivers
>30 dB of gain and 10 W average
power from a 28 V supply.
Designed for broadband operation,
the carrier and peaking
device, input splitter and output
combiner are integrated in a 10
x 10 mm plastic package.
150 W S-Band GaN
Amplifier for Radar
equipment, they are SMT mountable
with conductive epoxy and
solder. The AEQ05472 surface
mount package measures 28 x
16 x 7 mm.
Dualpath Active
Antenna System FEM
RFMW announced design
and sales support for a broad
bandwidth, high frequency,
GaN on SiC, power amplifier
from Qorvo. With decade band
width, the Qorvo QPA2962 serves
radar and EW applications
from 2 to 20 GHz. Delivering
10 W of saturated output power
with large signal gain of 13 dB,
power added efficiency (PAE) is
20 to 35% for this 22 V device
drawing 1.68 A of current. The
QPA2962 is packaged in a 5 x 5
mm, air cavity laminate package
for ease of use in densely populated
boards. Both RF ports
are internally DC blocked and
matched to 50 ohms allowing
for simple system integration.
Suitable for multiple wideband
systems including communications,
electronic warfare, test
instrumentation and radar applications
across both military and
commercial markets.
3-Stage Doherty
MMIC Amplifier
Serves 5G
RFMW announces design and
sales support for a high gain
amplifier from Ampleon. The
BLM10D3438-70ABG is a
3-stage, fully integrated Doherty
MMIC solution for 3.4 to 3.8
GHz power amplifier designs.
The Doherty configuration performs
well with DPD, making
it perfectly suited for mMIMO
5G applications in the N78 band.
Using Ampleon state-of-the-art
High-Performance
Frac-N Synthesizer
Integrates VCO
RFMW announced design and
sales support for a high-performance
synthesizer from CML
Microcircuits. The CMX940 is
a low-power, high-performance
Fractional-N PLL with fullyintegrated
wideband VCOs and
programmable output divider,
generating RF signals over a
continuous frequency range of
49 to 2040 MHz. Two, level-controlled,
single-ended RF outputs
support Tx and Rx sub-systems.
A configurable reference path is
used to minimize close-in phase
noise and mitigate integer and
sub-integer boundary spurious.
Available in a 7 x 7 mm VQFN
package, the chip configuration
is controlled by a SPI compatible
C-BUS serial interface and
requires only external loop filter
and clock reference to provide a
complete and very compact RF
synthesizer solution with typical
phase noise of -122 dBc/Hz, 10
kHz offset at 520 MHz. Consuming
only 58 mA from a 3...3.6
V supply, it’s the perfect choice
for a wide variety of portable and
battery powered wireless applications,
including digital narrowband
two-way radio equipment
compliant with ETSI PMR
co-existence standards applicable
under the Radio Equipment
Directive.
RFMW announced design and
sales support for a high efficiency,
GaN on SiC, power amplifier
from Qorvo. Serving S-band
radar from 2.9 to 3.5 GHz, the
Qorvo QPA3070 amplifier offers
150 W (52 dBm) of saturated
output power with power gain
of 28 dB. Power added efficiency
(PAE) is 58% for this
50 V device. The QPA3070 is
packaged as a 7 x 7 mm QFN
for reduced PCB real estate
and ease-of-use. 100% DC and
RF tested on-wafer to ensure
compliance to electrical specifications.
Thin Film Equalizer
Delivers Repeatability
RFMW announced availability
of the Knowles DLI, surface
mount, high frequency, gain
equalizer series. Offering a variety
of nominal gain slope from,
1 to 3.5 dB, all devices in the
series are footprint interchangeable.
The AEQ05472 has a bandwidth
from DC to 18 GHz with
low frequency insertion loss of
0.25 and 3.5 dB slope. Designed
as small, low cost solutions using
precision thin-film conductor and
resistor films, their proprietary,
high dielectric constant ceramics
provide superior RF performance
in applications such as broadband
EW, ECM, ECCM microwave
modules. Equalizers allow
compensation circuits to correct
for loss slope created by other
elements within a circuit, such
as in amplifier stages. Well suited
for use with pick and place
RFMW announced design and
sales support for an integrated
dualpath RF frontend. Each path
of the Renesas F0453B consists
of an RF switch and two gain
stages with 6 dB of gain control
supporting analog frontend receivers
in Active Antenna System
(AAS) from 3.3 to 4 GHz. The
F0453B provides 34.5 dB gain
with 23 dBm OIP3, 15 dBm
output P1dB, and 1.35 dB noise
figure at 3.5 GHz. Gain is reduced
6 dB in a single step with
a maximum settling time of 31
ns. The device uses a single 3.3
V supply and 130 mA of IDD.
The F0453B is offered in a 5 x
5 x 0.8 mm, 32-LGA package
with 50 ohms input and output
impedance for ease of integration
into the signal path. Typical
applications include Multi-mode
& Multi-carrier receivers, 4.5G
(LTE Advanced) and 5G band
42 & 43.
■ RFMW
www.rfmw.com
hf-praxis 3/2021 59