3-2021

RF & Wireless
New Generation 4 SiC FETs
Richardson Electronics, Ltd. announced
the availability of UnitedSiC’s Gen 4 SiC
FETs. Released earlier this week, the Gen
4 SiC FETs, named UJ4C, are the first and
only devices to be rated at 750 V. Based
on key Figures of Merit (FoM), the UJ4C
series enables new performance levels
and works with all the typical Si IGBT,
Si MOSFET, and SiC MOSFET drive
voltages. Available in 18- and 60-mOhm
options and 3- and 4-lead TO247 packages,
these new SiC FETs, provide increased
efficiency, reduced on-resistance per unit
area, low intrinsic capacitance, and offer
the lowest integral diode VF with excellent
reverse recovery and reduced deadtime
losses.
In hard-switching applications, these products
exhibit the lowest RDS(on) x EOSS
(mohm-uJ) resulting in lower turn-on
and turn-off loss, while in soft-switching
applications, their low RDS(on) x Coss(tr)
(mohm-nF) specification provides lower
conduction loss and higher frequency.
Applications that benefit the most from
these devices are automotive, industrial
charging, telecom rectifiers, datacenter
PFC, and DC-DC conversion as well as
renewable energy and energy storage.
Power Conversion Solutions
with Current Sensors and
Gate Drivers
Richardson Electronics, Ltd. announced
the availability of Tamura Corporation’s
Current Sensors & Gate Drivers. A leading
provider in magnetic components,
Tamura’s Current Sensors are highly reliable
with a fast response time and excellent
immunity to dv/dt noise. They also use the
Hall-Effect system, making them ideal for
measuring AC/DC currents. Applications
that benefit the most from these sensors
include but are not limited to uninterruptible
power supplies (UPS), solar power
generation, power conversion, and wind
power systems.
As a dedicated module for SiC MOSFETs/
IGBT gate drives, Tamura’s Gate Drivers
are an integrated module with a built-in
DC-DC converter and a dedicated drive
circuit and are suitable for power conditioners,
inverters, and gate drives for the
IGBT of motor drives and the SiC MOS-
FETs of next generation. As an all-in-one
device, these gate drivers feature wide
input voltage, low stray capacity, and highspeed
response and accuracy. Officially
endorsed by Fuji Electric, Tamura’s Gate
Drivers are an ideal solution for the GEN
7 X-Series IGBT modules. Fuji has tested
and recommended a driver for all products
available with the GEN 7 Series.
Power Conversion Product
Offering with IGBT Modules
Richardson Electronics, Ltd. strengthened
their power conversion product offering
with Fuji Electric’s 7th generation
(X-Series) IGBT modules. Fuji’s 7th Generation
IGBT modules represent the latest
IGBT chip technology and is specifically
designed to complement requirements
needed for the latest power conversion
applications including energy savings,
miniaturization, and increased reliability.
Key features are:
• The module has been optimized by
thinning the thickness and miniaturizing
the structure of the IGBT chip and
diode chip that makes up the module,
reducing power loss when compared to
previous generations. Applications have
seen inverter loss reduced by 10% and
chip temperature improved by 11 °C.
• A newly developed insulating board
has improved the heat dissipation of the
module, allowing a footprint reduction
of 36% while reducing power loss and
suppressing heat generation when compared
with previous generations.
• Higher temperature operation: This new
series is rated for continuous operation
at 175 °C allowing up to 35% more output;
doubling power cycling capabilities
compared to previous generations.
Product series includes 650/1200/1700 V,
10...1800 A, offered in small PIM, EconoPIM,
6-Pack, Dual, Dual XT, Econo-
PACK and PrimePACK packages.
New SiC Schottky Diodes
Richardson Electronics, Ltd. announced
the availability of new SiC Schottky diodes
from UnitedSiC, now with the lowest
VF-Qc for fast switching applications.
With its innovative device technology,
UnitedSiC enables its customers to deliver
industry-transforming levels of power
efficiency to the most advanced applications.
Its 3rd generation field-effect transistors
provide excellent switching speed,
fast body diode, high-temperature operation,
low R DS(ON) , and ruggedness that
make them outstanding solutions for all
switching circuit topologies.
UnitedSiC recently expanded its 3rd generation
SiC diode portfolio with the UJ3D
1200 V and 1700 V devices (UJ3D1210K2,
UJ3D1220K2, UJ3D1250K2, and
UJ3D1725K2). Typical applications that
will benefit the most from these devices
include fast-charge electric vehicle (EV)
charging access points, industrial motor
drives, and solar energy inverters.
Key features are:
• 25 A rated option for the 1700 V
• 10, 20, and 50 A rated options for the
1200 V
• >8.8 mm clearance between anode and
cathode
• lowest VF-Qc for fast switching applications
• excellent surge current capability
Richardson Electronics RF/
Microwave Offering with
Signal Microwave
Richardson Electronics, Ltd. announced
a new global distribution agreement with
Signal Microwave, a leader in microwave
connectors and test boards for applications
up to 110 GHz. The agreement aligns with
both companies’ commitment to providing
the highest reliability and quality products
for various applications, including RF and
microwave communications, wired and
wireless transmission, test equipment,
and radar.
Signal Microwave is moving beyond the
technology developed by traditional microwave
connector manufacturers to create
innovative new connector and PC board
products for both microwave and highspeed
digital applications. All products
are fabricated and assembled in the USA
and France using military-grade materials
and processes.
■ Richardson Electronics, Ltd.
www.rell.com
60 hf-praxis 3/2021