Electro Optical Characterisation of Short Wavelength Semiconductor ...
Electro Optical Characterisation of Short Wavelength Semiconductor ...
Electro Optical Characterisation of Short Wavelength Semiconductor ...
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GaN:Mg contact layer<br />
GaN Devices<br />
MOVPE: High Mg-doped GaN-contact layer, d=20nm<br />
MOVPE: GaN:Mg, d=80nm<br />
MOVPE: Al 0,08 Ga 0,92 N:Mg cladding, d=500nm<br />
<strong>Electro</strong>n blocking layer: Al 0,2 Ga 0,8 N, d=40nm<br />
Undoped GaN waveguide, d=100nm<br />
3x In 0,09 Ga 0,91 N/GaN quantum well, each ~10nm<br />
MOVPE: Si-doped GaN waveguide, d=100nm<br />
MOVPE: Al 0,1 Ga 0,9 N:Si cladding, d=500-2000 nm<br />
MOVPE: GaN:Si, d=500 nm<br />
HVPE: (Lumilog) n-doped GaN substrate d=300µm<br />
(LED-, transistor- or laser-grade)<br />
Figure 4.12: Principle assembly <strong>of</strong> a III-V laser diode made in Bremen<br />
Planar structure Shallow ridge Deep Ridge – etched through<br />
quantum well<br />
Figure 4.13: Different ridge depths [55]<br />
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