Burn-in & Test Socket Workshop - BiTS Workshop
Burn-in & Test Socket Workshop - BiTS Workshop
Burn-in & Test Socket Workshop - BiTS Workshop
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Key Results<br />
• Proven more systematic as compared to the merely trial-<br />
&-error TD approach decoupl<strong>in</strong>g optimization<br />
• Better understand<strong>in</strong>g of <strong>in</strong>dividual capacitor<br />
performance/effectiveness before plac<strong>in</strong>g any capacitor<br />
for decoupl<strong>in</strong>g.<br />
• Shown FD effectiveness <strong>in</strong> Z reduction through proper<br />
capacitor selection.<br />
• Less time consum<strong>in</strong>g because it uses less iterations to<br />
achieve decoupl<strong>in</strong>g optimization as compared to TD<br />
Simulation<br />
10<br />
Time<br />
(work<strong>in</strong>g day)<br />
5<br />
TD<br />
0<br />
BIB Complexity<br />
Complicated Normal PDO – Both<br />
(High Current) (Low Current) Complicated/Normal<br />
02/01/2002 <strong>BiTS</strong> 2002 Note: This is based on estimation 15<br />
FD<br />
~0.5Day
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