book of abstracts - IM2NP
book of abstracts - IM2NP
book of abstracts - IM2NP
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A B S T R A C T S FRIDAY, JULY 2 N A N O S E A 2 0 1 0<br />
Particularly, the increase <strong>of</strong> OH absorption band at ~3253 cm-1 (Fig.1(a)) may be attributed to the formation<br />
<strong>of</strong> methanol due to the reaction between methoxysilane heads and silicon oxide. Moreover CH2 band<br />
narrowing (Fig.1(b)) indicates the monolayer order is increasing during the grafting process. Fullerenes are<br />
then grafted from a toluene solution on these amine-functionalized SAMs. Two deposition conditions are<br />
compared: at room temperature and at high temperature under solvent reflux. AFM/STM experiments<br />
allowed monitoring fullerene deposition by either imaging (Fig.2) or I-V characteristics (Fig.3).<br />
Figure 2. STM (100nmx100nm) image <strong>of</strong><br />
C 60 molecules grafted under reflux during<br />
24 hours on NH 2 (aminoethanethiol)<br />
functionalized Au(111).<br />
Figure 3. STM I-V characteristic <strong>of</strong> C 60 molecules<br />
grafted under reflux during 24 hours on NH 2<br />
(aminoethanethiol) functionalized Au(111).<br />
3 – Conclusion<br />
Further studies are addressed such as thermal deposition <strong>of</strong> fullerenes [6], Surface Enhanced Raman<br />
Scattering on fullerenes grafted on nanostructured amine-modified gold substrates, and electronic transport<br />
properties (elctron trapping for memory cell application,…) <strong>of</strong> those C60 SAMs via evaporated metallic<br />
contacts.<br />
Acknowledgments<br />
Equipment used for this study was mainly funded by the “Objectif 2” EEC program (FEDER), the “Conseil<br />
Général du Var” Council, the PACA Regional Council and Toulon Provence Méditerranée which are<br />
acknowledged.<br />
References:<br />
1. A. Kanwal, M. Chowalla, Appl. Phys. Lett. 89, 203103 (2006)<br />
2. H.S. Majumdar, J.K. Baral, R. Osterbacka, O. Ikkala, H. Stubb, Organic Electronics 6, 188 (2005)<br />
3. G.P. Miller, Comptes-Rendus Chimie 9, 952 (2006)<br />
4. A. Ulman, Chem. Rev. 96, 1533(1996)<br />
5. F. Schreiber, Progress in Surf. Sci. 65, 151 (2000)<br />
6. T.H. Hou, U. Ganguly, E.C. Kan, Appl. Phys. Lett. 89, 253113 (2006)<br />
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