book of abstracts - IM2NP

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A B S T R A C T S TUESDAY, JUNE 29 N A N O S E A 2 0 1 0 conditions we can form either Ge dots or Ge nanowires. We provide evidence of the preferential nucleation of Ge nanostructures (dots and wires) on the pre-existing 2D array of AuSi liquid nanodroplets. The influence of the nanopatterns morphology / shape on the nanostructures nucleation and growth is demonstrated. The developed process provides a promising way to form large scale 2D-arrays of Ge and core-shell SiGe nanowires for various micro-nano-electronic and photovoltaic applications. 17H00-17H20 Pit-patterning by UV nanoimprint lithography for the site-controlled selfassembly of highly-uniform Si/Ge islands FROMHERZ E. Lausecker1, M. Brehm1, M. Grydlik1, I. Bergmair2, M. Mühlberger2, T. Fromherz1, G. Bauer1(1 Institute of Semiconductor and Solid State Physics, University of Linz, 4040 Linz, Austria 2 Functional Surfaces and Nanostructures, Profactor GmbH, 4407 Steyr, Austria) 1 – Introduction In the germanium-on-silicon (Ge-on-Si) system, it has been demonstrated that the nucleation sites of Si/Ge islands can be controlled by pre-structuring the Si substrate, allowing the growth of ordered and addressable Si/Ge islands. For applications relying on addressability, island-ordering on chip-sized areas and, thus a fast and inexpensive patterning method suitable for large areas and sub-100 nm structuring is required. 2 – Abstract Therefore we introduce UV nanoimprint lithography (UV-NIL) for the pit-pattering of molecular-beam epitaxy (MBE) substrates. Our quartz nanoimprint molds (1" x 1") contain a pillar pattern that is transferred into the Si substrate by UV-NIL and reactive-ion etching. Four pit-patterned fields extend over an area of 3 x 3 mm 2 . The pits have a depth of 45 nm and a diameter of 200 nm with a period of 400 nm. Six monolayers of Ge were deposited at 690 °C by MBE. The island surface is passivated by the growth of a thin Si capping layer. Atomic force microscopy images show extremely well-ordered Si/Ge islands. To the best of our knowledge, these island arrays represent the largest areas so far reported in literature with coherently ordered Si/Ge islands, which are addressable by a second lithographical step. The homogeneous island growth results in a significant improvement of the photoluminescence signal. In spatially resolved PL experiments, we observe no variation in the PL peak position and linewidth, 3 – Conclusion Our results suggest that pit-patterning by UV-NIL opens a route to explore the Si/Ge island formation on high-density pattern in the sub-100 nm regime over large areas. Our Si/Ge islands show excellent optoelectronic properties and therefore may be integrated as active building blocks in Si based optoelectronic devices. 53
A B S T R A C T S TUESDAY, JUNE 29 N A N O S E A 2 0 1 0 17H20-17H40 Transport properties of junctions and lattices via solvable models GONCHAROV - Nikolai Bagraev, e-mail: impurity.dipole@pop.ioffe.rssi.ru A.F. Ioffe Physico- Technical Institute,St. Petersburg. Lev Goncharov, e-mail: : Lev.goncharov@mail.ru Department of Physics of St. Petersburg University,198505, St. Petersburg, Russia. Gaven Martin, e-mail : G. J. Martin@massey.ac.nz New Zealand Institute of Advanced Study, Massey University Albany campus, Auckland, New Zealand. Boris Pavlov,e-mail e-mail: pavlovenator@gmail.com New Zealand Institute of Advanced Study, Massey University Albany campus, Auckland, New Zealand, A. Yafyasov, e-mail: yafyasov@bk.ru Department of Physics of St. Petersburg University, St. Petersburg, Russia. 54
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