book of abstracts - IM2NP

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A B S T R A C T S WEDNESDAY, JUNE 30 N A N O S E A 2 0 1 0 9H50-10H10 Magnetic Fluctuations of Bit Cells in Self-Assembled Magnetic Nanopattern. 1,*Kai Schlage, 1Sebastien Couet, 1Stephan V. Roth, 1Ulla Vainio, 2Rudolf Rüffer 3,1Mottakin M. Abul Kashem, 3Peter Müller-Buschbaum and 1Ralf Röhlsberger (1DESY, Notkestr. 85, 22607 Hamburg, Germany; 2European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France; 3TU München, Physik Department E13, 85747 Garching, Germany)* kai.schlage@desy.de 1 – Introduction On the way towards ultimate magnetic storage densities, self-organized ordered polymer nanostructures appear to be very promising templates for the growth of magnetic nanodot arrays covering almost arbitrary large areas with nanoscopic unit cells down to a few nanometre. It is obvious that the maximum density of separated magnetic nanodots is limited by the superparamagnetic effect when the moments of the dots become subject to thermal fluctuations. 2 – Abstract This limit can be overcome by replacing the dot array by its inverse structure, the antidot array. Tailoring the magnetic properties of such structures requires a deep knowledge of the interplay between structure, chemistry and magnetism. Here we apply a new kind of 3D microscopy combining high-resolution x-ray scattering techniques to track all these key parameters during growth of this self-assembled magnetic nanostructure. A strong selective 3D wetting of iron on the nanostructured polymer template, the formation of an ultra-thin single-phase oxide layer in contact to the polymer and a unique transition beyond the superparamagnetic limit of the resulting iron antidot array are directly observed. 3 – Conclusion The results are expected to have a high impact on the fabrication process of magnetic nanostructures not only for fundamental research but also for realization of magnetic data storage devices. 10H50-11H20 Band gap engineering in ZnCdO nanostructures: synthesis, properties and applications. A.Yu.Kuznetsov, V.Vishnukanthan, M.Trunk, T.Zhang, A.Azarov, A.Galeckas (Dept of Physics, University of Olso, P.O.Box 1048 Blindern, NO-0316 Oslo, Norway) andrej.kuznetsov@fys.uio.no Oxide semiconductors in general and ZnO-based semiconductors in particular have attracted much of attention on behalf of unique properties having promising applications in advanced electronic and optoelectronic devices. For example, realizing novel band-to-band absorbers made of reasonably cheap materials is a challenge in photovoltaics and – highlighting just one of ZnO potentials – band gap engineering in ZnO-based materials can actually answer this challenge. Indeed, alloying ZnO with CdO results in a gradual band gap shrinking in the range of 3.3-1.8 eV as a function of Cd content. Moreover, pure ZnO may be readily synthesized in various forms of nanowires (NWs) and manufacturing of ZnCdO NWs having a graded concentration/bandgap is interesting to research too. In the frame of this work we are making a systematic effort to manufacture and study ZnCdO, synthesizing high quality crystalline samples using metal organic vapor phase epitaxy and targeting both multilayer (ML) and NW structures. The fundamental result reached so far is in realization of graded ZnCdO ML 73
A B S T R A C T S WEDNESDAY, JUNE 30 N A N O S E A 2 0 1 0 nanostructures as well their characterization employing a variety of methods. As an example, please find two diagrams below illustrating (a) - photoluminescence measurements and (b) - chemical composition depth profiling in typical ML nanostructures (note, Cd content is deduced from Rutherford backscattering spectroscopy results). The work on realization of graded ZnCdO NWs is in progress. 74
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