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book of abstracts - IM2NP

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P R O G R A M THURSDAY, JULY 1 N A N O S E A 2 0 1 0<br />

Thursday, July 1<br />

Session 12<br />

Room Calendal<br />

III-V Semiconductors (Chairman: Mesli)<br />

9H00-9H40<br />

KAPON (EPFL SB IPEQ LPN, PH D3 425 (Bâtiment PH), Station 3CH-1015 Lausanne, Switzerland).<br />

Directed-Self-Ordering <strong>of</strong> Semiconductor Quantum Nanostructures Grown on<br />

Nonplanar.<br />

9H40-10H00 BRU-CHEVALLIER (1 INL Université de Lyon, CNRS UMR-5270, Ecole Centrale de Lyon, 69134,<br />

Ecully, France. 2 INL Université de Lyon, CNRS UMR-5270, INSA de Lyon –Bât Blaise Pascal, 69621<br />

Villeurbanne Cedex France. 3 LPN, CNRS UPR 20, route de Nozay, 91460 Marcoussis, France. 4 FOTON, CNRS<br />

6082, INSA, 20 avenue des buttes de Coesmes, 35708 Rennes Cedex 7).<br />

In(Ga)As quantum dots grown by Molecular Beam Epitaxy on Si substrates.<br />

10H00-10H20<br />

HAZDRA (1Department <strong>of</strong> Microelectronics, Faculty <strong>of</strong> Electrical Engineering, Czech Technical University in<br />

Prague, Technická 2, CZ-16627 Prague 6, Czech Republic, 2Institute <strong>of</strong> Physics <strong>of</strong> the AS CR, v. v. i.,<br />

Cukrovarnická 10, 162 53 Prague 6, Czech Republic).<br />

Self-assembled InAs quantum dots embedded into GaAs with different strain<br />

reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm<br />

bands.<br />

10H20-10H40 ILAHI ((1) Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences, Avenue de<br />

l‟environnement, 5019 Monastir, Tunisia. (2)Centre de Recherche en Nan<strong>of</strong>abrication et Nanocaractérisation<br />

(CRN2), Université de Sherbrooke, (Québec) Canada J1K 2R1. (3) Institut des Nanotechnologies de Lyon, UMR<br />

5270, Bat. F7, 36 avenues Guy de Collongue, 69134 Ecully Cedex, France).<br />

Temperature dependent photoluminescence properties <strong>of</strong> InAs/InP quantum sticks<br />

subjected to low energy phosphorous ion implantation and subsequent annealing.<br />

10H40-11H10<br />

C<strong>of</strong>fee Break<br />

79

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