book of abstracts - IM2NP

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A B S T R A C T S TUESDAY, JUNE 29 N A N O S E A 2 0 1 0 17H40-18H00 Nano-cones Formation on a Surface of Si1-xGex Layers by Laser Radiation. A.Medvid‟1,3, P.Onufrijevs1, K.Lyutovich2, M. Oehme2, E. Kasper2 (1Riga Technical University, 14 Azenes Str., Riga, LV-1048, Latvia, 2Universitat Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany,3Institute of Semiconductor Physics National Academy of Science of Ukraine, 45 Pr.Nauki, 252650, Kyiv- 28, Ukraine) medvids@latnet.lv, lyutovich@iht.uni-stuttgart.de 1 – Introduction One of the basic directions in development of modern microelectronics is elaboration of new methods of nanosize structure formation and implementation of nanoelectronic components in devices. 2 – Abstract The study of self-assembling nano-cones induced by irradiation of nanosecond Nd:YAG laser pulses on a surface of a Si1-xGex solid solution is reported. It is shown that dynamics of nano-cones formation depends on concentration of Ge atoms (x) in Si lattice and on the intensity of laser radiation (LR). Two different processes of nano-cones formation depending on x are observed. The first one - at higher concentration of Ge atoms x = 0.3-0.4 and the second one - at lower concentration of Ge atoms at x=0.15 take place. At the first stage, similar processes of nano-cones formation occur. It means, at low intensity of LR I2.0 MW/cm2 nano-cones formation takes place by Stransky- Krastanov mode. On the contrary, at lower concentration of Ge atoms cones look like “tree ring” [2] growth due to melting of Ge separated islands on the irradiated surface at intensity of LR I=20 MW/cm2. 3 – Conclusion Nano-cones formation on the irradiated surface of SiGe strongly depends on concentration of Ge atoms and on intensity of laser radiation which can be used for the control of the shape and size of nanostructures. 4 – References 1. A. Medvid‟ and L. Fedorenko, Thermogradient mechanism of p-n junction formation by laser radiation in semiconductors. Applied Surface Sciences, Vol.197-198, (2002), pp. 877-882. 2. A. Merdzhanova, M.Rastrelli, S.Stoffel, O.Kiravittaya, G. Schmidt, Island motion triggered by the growth of strain- relaxed SiGe/Si (001) islands. Journal of Crystal Growth. Vol.301-302, (2007), pp.319.-323. 55
A B S T R A C T S TUESDAY, JUNE 29 N A N O S E A 2 0 1 0 18H00-18H20 High refractive index modification inside Si02 by femtosecond laser created self-ordered planar nanostructures. David Grojo1,2, Thomas Barillot1, Marina Gertsvorlf1,3, Shuting Lei4, David M. Rayner1 and Paul B. Corkum1,3 (1National Research Council of Canada, Steacie Institute for Molecular Sciences, Ottawa, Canada 2LP3 –UMR 6182, CNRS-Univ. Méditerranée, Marseille, France 3University of Ottawa, Ottawa, Ontario, Canada 4Kansas State University, 2012 Durland Hall, Manhattan, Kansas, USA) Illumination with intense femtosecond optical pulses focused to small focal spots modifies dielectrics in such a way that the refractive-index can be locally adjusted. This represents today an attractive microfabrication method for photonic applications. Here, we investigate the non-uniform nature of the strong laser field ionisation in amorphous silica (a-SiO2) which translates in material cracking at a subwavelength scale. Under repeated illumination, the cracks migrate to form beautifully-ordered arrays of ~8-nm planar nanocracks with a crack-to-crack spacing of λ/2 in the medium. These are extending through the focal region with no defect and are oriented perpendicular to the laser polarization [1,2]. The material transport is amazingly driven by the strong laser field making possible to change the writing orientation at anytime with the polarization. We show the nanotructures are characterized by a very large refractive index change (up to Δn/n=1.8%) and form birefringence (ns-np ~0.01 at 800 nm). This offers unprecedented control over the linear optical properties of a-SiO2 anywhere in 3-D space. The local change in the focal region leads progressively to the self-generation of a polarization dependent biconvex defocusing microlens (Fig). The refractive feedback effect on the light that creates the microlens ascribes a self-limited character on the writing process that is attractive for technological considerations. This is achieved without any noticeable increase in linear losses and opens a route to adding new functionality inside optical fibers or bulk materials. [1] V. R. Bhardwaj, E. Simova, P. P. Rajeev, C. Hnatovsky, R. S. Taylor, D. M. Rayner, and P. B. Corkum, Phys. Rev. Lett. 96, (2006)057404 [2] D. Grojo, M. Gertsvolf, H. Jean-Ruel, S. Lei, L. Ramunno, D. M. Rayner, and P. B. Corkum, Appl. Phys. Lett. 93 (2008) 243118. 18H20-18H40 Fabrication of an IR emitting ErQ3-based distributed feedback laser by X-ray Interference Lithography. S. Prezioso1, P. De Marco1, F. Bisti1, M. Donarelli1, S. Penna2, A. Reale2, S. Santucci1, and L.Ottaviano1 (1Dipartimento di Fisica, Università dell‟Aquila, gc-LNGS INFN, Via Vetoio, 67100, L‟Aquila, Italy 2Dip. di Ingegneria Elettronica, Univ. degli studi di Roma “Tor Vergata”, Viale Politecnico 1, 00133 Roma, Italy) 1 – Introduction Modern telecommunication technology requires to process large volumes of information for scientific, military and civil purposes. IR light is the most suitable radiation to sustain petabyte-per-year traffics. IR optical fiber technology is sufficiently mature as well as the micro-electronics industry to accept this challenge. The bottleneck is represented by the optical interconnection between fiber and chip. The onchip collection of the optical information is one of the most promising strategies. In this work we propose the fabrication of an IR emitting ErQ3-based distributed feedback laser as the onchip light source in charge of transferring the information collected from the chip directly into the optical fiber. Using ErQ3 as the active medium, we can combine the perfect adaptability of amorphous organic materials to any kind of surface, periodically modulated surfaces included, with the perfect match of Er 56
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