book of abstracts - IM2NP

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A B S T R A C T S TUESDAY, JUNE 29 N A N O S E A 2 0 1 0 Fig. 2: TEM image of a sample obtained after deposition of 60 nm of Ge on a 25 nm thick Mn5Ge3 layer at 450 °C. A part of Mn has diffused into the substrate and the surface Mn5Ge3 layer has a thickness of ~17 nm. References [1] O.M.J. van ‟t Erve, G. Kioseoglou, A. T. Hanbicki, C. H. Li, B.T. Jonker, R. Mallory, M. Yasar, A. Petrou, Appl. Phys. Lett 84 (2004) 4334. [2] Y.D. Park, A.T. Hanbicki, S.C. Erwin, C.S. Hellberg, J.M. Sullivan, J.E. Mattson, T.F. Ambrose, A. Wilson, G. Spanos, B.T. Jonker, Science 295 (2002) 651. [3] Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 94 (2009) 182105; R. Jaafar, Y. Nehme, D. Berling, J. L. Bubendorff, A. Mehdaoui, C. Pirri, G. Garreau, and C. Uhlaq-Bouillet, Appl. Phys. Lett. 93 (2008) 033114; C. Zeng, S.C. Erwin, L.C. Feldman, A.P. Li, R. Jin, Y. Song, J.R. Thompson, H.H. Weitering, Appl. Phys. Lett. 83, 5002 (2003). [4] S. Olive-mendez, A. Spiesser, L.A. Michez, V. Le Thanh, A. Glachant, J. Derrien, T. Devillers, A. Barski, M. Jamet, Thin Solid Films 517 (2008) 191. [5] A. Spiesser S.F. Olive-Mendez, M.-T. Dau, L.A. Michez, A. Watanabe, V. Le Thanh, A. Glachant, J. Derrien, A. Barski, M. Jamet, Thin Solid Films 518 (2010) S113. 17H40-18H00 Assessing mechanical strain at the nanometer scale induced in silicon channel by periodic gate lines arrays through high resolution X-ray diffraction and modeling S. Escoubas1,2, G. Gaudeau1,2, Y. Ezzaidi1,2, O. Thomas1,2, P. Morin3 (1 Aix- Marseille Université, IM2NP; 2 CNRS, IM2NP UMR 6242, Faculté des Sciences et Techniques, Campus de Saint- Jérôme, Avenue Escadrille Normandie Niemen, Case 142, 13397 Marseille Cedex, France; 3 ST Microelectronics, 850 rue Jean Monnet, 38920 Crolles, France) stephanie.escoubas@im2np.fr 1 – Introduction Periodic structures are often encountered in semiconductor devices whether they are prepared by lithography or by self-organization. The lateral dimension of the devices is continuously decreasing with increasing performances. Stress engineering is becoming of increasing interest to enhance microelectronics device performance in particular by improving electron or hole mobility [1]. For that purpose, one way consists in stressing the transistor Si channel by depositing a strained layer on top of the polysilicon gate. Silicon nitride is a good candidate as the layer can be either tensile or compressive depending on the process parameters [2]. Even though the strain field induced in silicon can be predicted with the help of finite elements modelling, corroborating the calculated strain field with measurements is crucial. As a consequence, measuring strains or stresses at the nanometer scale is a real challenge. 45
A B S T R A C T S TUESDAY, JUNE 29 N A N O S E A 2 0 1 0 In this study we investigate the periodic strain field in silicon with high resolution X-ray diffraction, which is very sensitive to local strains (
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