book of abstracts - IM2NP

P R O G R A M THURSDAY, JULY 1 N A N O S E A 2 0 1 0
Session 14
Room Calendal
Island (Chairman: Ronda)
17H00-17H30
VENABLES (1) Physics, 2) Materials, Arizona State University, Tempe, Arizona, USA, 3) LCN-UCL,
London, UK; 4) Lawrence Semiconductor, Tempe, Arizona, USA).
Modeling Facet Nucleation and Growth of Hut Clusters on Ge/Si(001)
17H30-17H50 COMBES (CNRS, CEMES (Centre d'Elaboration des Matériaux et d'Etudes Structurales), BP 94347, 29 rue J.
Marvig, 31055 Toulouse,France - Université de Toulouse, UPS, 31055 Toulouse, France).
Epitaxial growth on a dynamically patterned substrate: a theoretical study.
17H50-18H10
BREHM (1 Institute of Semiconductor Physics, Johannes Kepler University, Linz, Austria, 2 L-NESS and
Materials Science Department, University of Milano-Bicocca, I-20125 Milano, Italy).
Sorting thermodynamic and kinetic paths in the transition from 2D to 3D dot growth.
18H10-18H30 PERSICHETTI (Department of Physics, University of Roma “Tor Vergata” - Via della Ricerca Scientifica, 1
Roma, Italy).
Formation and Localization of GeSi Quantum Dots on vicinal surfaces: a Scanning
Tunneling Microscopy Characterization.
18H30-18H50
RICHARD ((a) Univ. Paul Cézanne, IM2NP, Marseille (France); (b) ID01/ESRF, Grenoble (France); (c) CEA
Grenoble, INAC (France; (d) Univ. Complutense Madrid (Spain); (e) Univ. Zaragoza, ICMA (Spain); (f) Grenoble
INP Minatec, LMGP (France); (g) Johannes Kepler Univ. Linz (Austria); (h) IFW Dresden (Germany)).
In situ and ex situ x-ray studies of the growth of Ge islands on nominal and nanostructured
Si(001) substrates.
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