book of abstracts - IM2NP

Z[nm]
A B S T R A C T S WEDNESDAY, JUNE 30 N A N O S E A 2 0 1 0
sulfonato groups (SO3-) point towards the electrophilic surface. The three
oxygen atoms interact with three adjacent Si adatoms thanks to an attractive
electrostatic force. However, molecules are stabilized at an equilibrium distance
above the surface due to the repulsive interaction between (SO3-) and the
negatively charged rest-atom.
Fig.1 STM image of MSP on Si(111)-7x7surface (I=0.013 nA, V=1.7 v)
3 – Conclusion:
A large molecular organic paving has been achieved at room temperature by two dimensional template
effects of the highly reactive Si(111)-7×7. We have demonstrated that the MSP molecules are adsorbed onto
the surface by electrostatic interactions between the local charges of the Si atoms and the negative sulfonato
groups.
12H00-12H20
Block Copolymer Self-Assembly on Nanostructured Surfaces.
DIRANI Ali, DIKA Ihab, SOPPERA Olivier (Institut de Sciences des Matériaux de Mulhouse
(IS2M –CNRS LRC7228) 15, rue Jean Starcky, BP 2488, 68057 MULHOUSE Cedex, France)
olivier.soppera@uha.fr, ali.dirani@uha.fr
Block copolymer lithography harnesses the power of chemistry to reduce feature size even further,
potentially smaller than 10 nm. Block copolymers have been proposed for many applications based
Image 500 nm x 500 nm
Topography
2
1.5
1
0.5
0
0
20
40
35 nm
60
80
X[nm]
100
120
Block copo
PS-PMMA
140
160
Au
180
300 nm
principally on their ability to form regular nanometer-scale
patterns. These self-assembled patterns have been considered
as nanolithographic masks as well as templates for the further
synthesis of inorganic or organic structures. So far, the main
limitation for practical applications has been due to the lack of
order at long distance and much work has been done to control
the self-assembly and orientation of block copolymers.
Patterned substrates with length scales comparable to the
natural periodicity of the block copolymer were used to
control the orientation of the nanodomains of the block
copolymer.
Au patterns with trenches ranging from 100 to 1000 nm were
prepared by DUV lithography, Au deposition and lift-off.
Block copolymer thin films were deposited on these
nanopatterned substrates and annealed. They consisted in P(Sb-MMA)
block copolymers with various molecular weights.
The typical lateral size of the blocks was 35 nm.
Image 500 nm x 500 nm
Phase
Image 2µm x 10 µm
Phase
69