book of abstracts - IM2NP

A B S T R A C T S THURSDAY, JULY 1 N A N O S E A 2 0 1 0
dewetting. We will show that a more complete theory is needed to understand all the aspects of the dewetting
of Si on SiO2.
Support by ANR PNANO (ANR 08-Nano-036) is gratefully acknowledged
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12H10-12H30
Dewetting of Solid films.
O. Pierre-Louis(1), A. Chame(2), Y. Saito(3), M. Dufay(1) (1- la Doua, Bâtiment Léon
Brillouin, 43 Boulevard du 11 Novembre 1918, F 69622 Villeurbanne, France ; 2- Universidade Federal
Fluminense,Avenida Litoranea s/n, 24210-340 Niteroi RJ, Brazil ; 3- Keio University, 3-14-1, Hiyoshi, Kohoku-ku,
Yokohama, Kanagawa, 223-8522 Japan).
1 – Introduction
Solid films with sub-micron thicknesses may break-up into islands to lower their energy. Such a "dewetting"
process was observed in many experimental systems . Up to now, the theoretical analysis of solid-film
dewetting has been based on the Mullins continuum model for surface diffusion. This approach predicts the
formation of a smooth dewetting rim at the edge of the film, with scaling laws for the increase of the radius
of a hole $\sim t^{1/4}$[Srolovitz et al 1986], and for the position of straight fronts $\sim t^{2/5}$[Wong et
al 2000]. However, the presence of facets, the evolution of which is controlled by 2D nucleation, leads to
novel phenomena which cannot be accounted for within the frame of the Mullins model. Examples include
the relaxation of nano-crystals[Combe et al 2000, Mullins et al 2000], the drift of islands on vicinal
substrates[Ling et al 2004], layer-by-layer dewetting of ice islands[Thurmer et al 2008], or the formation of
labyrinthine patterns of bilayer islands during the dewetting of a monolayer[1].
2 – Abstract
We use the Solid on Solid KMC model of Ref.[1]. On a square lattice with lattice unit $a$ and periodic
boundary conditions, the local height is $z\geq 0$. The substrate surface, at $z=0$, is flat and frozen.
Epilayer atoms hop to nearest neighbor sites with rates $\nu_0\,{\rm e}^{-E/T}$, where $\nu_0$ is an
attempt frequency, and $T$ is the temperature (in units with $k_B=1$). The hopping barrier is $E=nJ-
\delta_{z,1}E_S$, where $n$ is the number of in-plane nearest neighbors, $J$ is the bond energy, $\delta$ is
the Kronecker symbol, and $E_S$ is the adsorbate-substrate excess energy. Our energy unit is $J$, so that
$J=1$. When $E_S\gg1$, the energy is minimized by creating high islands\cite{PierreLouis2007}. When
$E_S\rightarrow 0$ the epilayer spreads on the substrate. We choose $0.3