PCT/1999/48 : PCT Gazette, Weekly Issue No. 48, 1999 - WIPO
PCT/1999/48 : PCT Gazette, Weekly Issue No. 48, 1999 - WIPO
PCT/1999/48 : PCT Gazette, Weekly Issue No. 48, 1999 - WIPO
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<strong>48</strong>/<strong>1999</strong><br />
2 Dec/déc <strong>1999</strong> <strong>PCT</strong> <strong>Gazette</strong> - Section I - <strong>Gazette</strong> du <strong>PCT</strong> 14333<br />
(54) • LAMP FOR GENERATING HIGH PO-<br />
WER ULTRAVIOLET RADIATION<br />
• LAMPE EMETTANT UN RAYONNE-<br />
MENT ULTRAVIOLET DE GRANDE<br />
PUISSANCE<br />
(71) TRITON THALASSIC TECHNOLO-<br />
GIES, INC. [US/US]; 241 Ethan Allen<br />
Highway, Ridgefield, CT 06877 (US).<br />
(72) MORGAN, Gary, L.; 5821 Bellanca Drive,<br />
Elkridge, MD 21227 (US). POTTER,<br />
James, M.; 2245 47th Street, Los Alamos,<br />
NM 87544 (US).<br />
(74) WOFSY, Scott, D.; Cummings & Lockwood,<br />
107 Elm Street, P.O. Box 120,<br />
Stamford, CT 06904 (US).<br />
(81) CA JP NO; EP (AT BE CH CY DE DK ES<br />
FI FR GB GR IE IT LU MC NL PT SE).<br />
(51) 6 H01L<br />
(11) WO 99/62105 (13) A2<br />
(21) <strong>PCT</strong>/US99/11824<br />
(22) 27 May/mai <strong>1999</strong> (27.05.<strong>1999</strong>)<br />
(25) en (26) en<br />
(30) 09/086,365 28 May/mai 1998<br />
(28.05.1998)<br />
(30) <strong>No</strong>t furnished /<br />
non communiqué<br />
(30) <strong>No</strong>t furnished /<br />
non communiqué<br />
(30) <strong>No</strong>t furnished /<br />
non communiqué<br />
12 May/mai <strong>1999</strong><br />
(12.05.<strong>1999</strong>)<br />
12 May/mai <strong>1999</strong><br />
(12.05.<strong>1999</strong>)<br />
18 May/mai <strong>1999</strong><br />
(18.05.<strong>1999</strong>)<br />
(43) 2 Dec/déc <strong>1999</strong> (02.12.<strong>1999</strong>)<br />
US<br />
US<br />
US<br />
US<br />
(54) • IMPROVED TRANSFORMER OPERA-<br />
TIONS<br />
• AMELIORATIONS APPORTEES<br />
AU FONCTIONNEMENT D’UN<br />
TRANSFORMATEUR<br />
(71) ROMPOWER INC. [US/US]; Suite 414,<br />
4400 E. Broadway, Tucson, AZ 85710 (US).<br />
(72) JITARU, Ionel; Suite 414, 4400 E. Broadway,<br />
Tucson, AZ 85710 (US).<br />
(74) OGRAM, Mark, E.; 8040 S. Kolb Road,<br />
Tucson, AZ 85706 (US).<br />
(81) AU CA IL JP KR NO NZ RO; EP (AT BE<br />
CH CY DE DK ES FI FR GB GR IE IT LU<br />
MC NL PT SE).<br />
(51) 6 H01L 21/00<br />
(11) WO 99/62106 (13) A2<br />
(21) <strong>PCT</strong>/GB99/01606<br />
(22) 20 May/mai <strong>1999</strong> (20.05.<strong>1999</strong>)<br />
(25) en (26) en<br />
(30) 9810950.7 22 May/mai 1998<br />
(22.05.1998)<br />
(30) 9813267.3 20 Jun/juin 1998<br />
(20.06.1998)<br />
(30) 9905230.0 9 Mar/mar <strong>1999</strong><br />
(09.03.<strong>1999</strong>)<br />
GB<br />
GB<br />
GB<br />
(43) 2 Dec/déc <strong>1999</strong> (02.12.<strong>1999</strong>)<br />
(54) • METHOD OF PRODUCING A STRUC-<br />
TURED SURFACE<br />
• PROCEDE DE PRODUCTION D’UNE<br />
SURFACE STRUCTUREE<br />
(71) THE UNIVERSITY OF BIRMINGHAM<br />
[GB/GB]; Edgbaston, Birmingham B15 2TT<br />
(GB).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) PALMER, Richard, Edward [GB/GB];<br />
"Dyffryn", Brake Lane, Hagley, Stourbridge,<br />
West Midlands DY8 2XW (GB). SEEGER,<br />
Katrin [DE/GB]; 16 Willow Mews, Selly<br />
Oak, Birmingham B29 5JF (GB).<br />
(74) PEARCE, Anthony, Richmond et al. / etc.;<br />
Marks & Clerk, Alpha Tower, Suffolk Street<br />
Queensway, Birmingham B1 1TT (GB).<br />
(81) JP US; EP (AT BE CH CY DE DK ES FI<br />
FR GB GR IE IT LU MC NL PT SE).<br />
(51) 6 H01L 21/00<br />
(11) WO 99/62107 (13) A1<br />
(21) <strong>PCT</strong>/US99/10194<br />
(22) 10 May/mai <strong>1999</strong> (10.05.<strong>1999</strong>)<br />
(25) en (26) en<br />
(30) 09/085,553 27 May/mai 1998<br />
(27.05.1998)<br />
US<br />
(43) 2 Dec/déc <strong>1999</strong> (02.12.<strong>1999</strong>)<br />
(54) • BATCH END EFFECTOR FOR SE-<br />
MICONDUCTOR WAFER HANDLING<br />
• EFFECTEUR TERMINAL DE LOT<br />
POUR LA MANIPULATION DE PLA-<br />
QUETTES SEMI–CONDUCTRICES<br />
(71) VARIAN SEMICONDUCTOR EQUIP-<br />
MENT ASSOCIATES, INC. [US/US]; 35<br />
Dory Road, Gloucester, MA 01930 (US).<br />
(72) MUKA, Richard, S.; 32 Candelwood Drive,<br />
Topsfield, MA 01983 (US).<br />
(74) MCCLELLAN, William, R.; Wolf, Greenfield<br />
& Sacks, P.C., 600 Atlantic Avenue,<br />
Boston, MA 02210 (US).<br />
(81) JP KR; EP (AT BE CH CY DE DK ES FI<br />
FR GB GR IE IT LU MC NL PT SE).<br />
(51) 6 H01L 21/02<br />
(11) WO 99/62108 (13) A2<br />
(21) <strong>PCT</strong>/IB99/00835<br />
(22) 10 May/mai <strong>1999</strong> (10.05.<strong>1999</strong>)<br />
(25) en (26) en<br />
(30) 98401232.8 22 May/mai 1998<br />
(22.05.1998)<br />
EP<br />
(43) 2 Dec/déc <strong>1999</strong> (02.12.<strong>1999</strong>)<br />
(54) • METHODS FOR FORMING SELF–<br />
PLANARIZED DIELECTRIC LAYER<br />
FOR SHALLOW TRENCH ISOLATION<br />
• PROCEDES DE REALISATION D’UNE<br />
COUCHE DE DIELECTRIQUE AUTO–<br />
APPLANISSANT POUR L’ISOLATION<br />
DE TRANCHEES PEU PROFONDES<br />
(71) APPLIED MATERIALS, INC. [US/US];<br />
3050 Bowers Avenue, Santa Clara, CA<br />
95054 (US).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) GEIGER, Fabrice [FR/FR]; 29, avenue<br />
de la Plaine Fleurie, F–38240 Meylan (FR).<br />
GAILLARD, Frédéric [FR/FR]; Rue des<br />
Tallifardières, F–38800 Voiron (FR).<br />
(74) BERNADICOU, Michael, A. et al. / etc.;<br />
Blakely, Sokoloff, Taylor & Zafman LLP,<br />
7th floor, 12400 Wilshire Boulevard, Los<br />
Angeles, CA 90025 (US).<br />
(81) JP KR SG US.<br />
(51) 6 H01L 21/285, 29/78, 21/336<br />
(11) WO 99/62109 (13) A1<br />
(21) <strong>PCT</strong>/KR99/00260<br />
(22) 26 May/mai <strong>1999</strong> (26.05.<strong>1999</strong>)<br />
(25) en (26) en<br />
(30) 1998/19299 27 May/mai 1998<br />
(27.05.1998)<br />
(43) 2 Dec/déc <strong>1999</strong> (02.12.<strong>1999</strong>)<br />
KR<br />
(54) • METHOD OF FORMING COBALT DI-<br />
SILICIDE CONTACTS BY CHEMICAL<br />
VAPOR DEPOSITION<br />
• PROCEDE PERMETTANT DE FOR-<br />
MER DES CONTACTS EN BISILI-<br />
CIURE DE COBALT PAR DEPOT<br />
CHIMIQUE EN PHASE VAPEUR<br />
(71) GENITECH CO., LTD. [KR/KR]; 1694–5,<br />
Shinil–dong, Taedeok–gu, Taejon 306–230<br />
(KR).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) AHN, Byung, Tae [KR/KR]; 101–1501,<br />
Hanbit Apt., 99, Uheun–dong, Yusong–gu,<br />
Taejon 305–333 (KR). RHEE, Hwa, Sung<br />
[KR/KR]; 201 Dongil Villa, 1681–5, Bongchun<br />
6–dong, Kwanak–gu, Seoul 151–056<br />
(KR).<br />
(74) HUH, Jin, Seok; J. S. HUH Patent Office,<br />
206 Sungji Building, 1338–22, Seocho–dong,<br />
Seocho–ku, Seoul 137–070 (KR).<br />
(81) JP US; EP (AT BE CH CY DE DK ES FI<br />
FR GB GR IE IT LU MC NL PT SE).<br />
(51) 6 H01L 21/306, 21/302<br />
(11) WO 99/62110 (13) A1<br />
(21) <strong>PCT</strong>/US99/11013<br />
(22) 18 May/mai <strong>1999</strong> (18.05.<strong>1999</strong>)<br />
(25) en (26) en<br />
(30) 09/084,565 26 May/mai 1998<br />
(26.05.1998)<br />
(43) 2 Dec/déc <strong>1999</strong> (02.12.<strong>1999</strong>)<br />
US<br />
(54) • POST–ETCHING ALKALINE TREAT-<br />
MENT PROCESS<br />
• TRAITEMENT ALCALIN POST–<br />
GRAVAGE