MEMS Resonators for Frequency Control and Sensing Applications

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Piezoelectric Transduction Abdolvand & Ayazi, Georgia Tech and Oklahoma Univ. Polcawich & Bhave, US Army Lab and Cornell • Trade-offs between Q and k t 2 have been played in laterally vibrating resonators. • Q enhancement at low frequency has been attained at the expenses of coupling by using the piezoelectric layer on silicon (resonator body) • Gains are limited at high frequency due to wavelength becoming comparable to silicon thickness
Equivalent Circuit: 1-port devices • Equivalent ckt of resonator is fully defined • The transformer is generally eliminated and simply the LCR component with the transducer capacitance is reported. • This is known as the Butterworth Van Dyke (BVD) model • At the MEMS scale (given the reduced size of the device) the external elements that provide for physical support (i.e. the silicon) and routing of the electrodes need to be taken into account via a parasitic series resistance, R s, and a parallel resistance, R o • There is also a parasitic capacitance (C p) in parallel with the resonator branch, but this can be made negligible if the device is properly sized, a high k t 2 is available, and the substrate resistivity is high Modified Butterworth Van Dyke (MBVD) model
Page 1 and 2: MEMS Resonators for Frequency Contr
Page 3 and 4: MEMS Resonators, RF Applications an
Page 5 and 6: MEMS Resonator Applications SAW/Qua
Page 7 and 8: RF MEMS Resonator Market Source: Yo
Page 9 and 10: Mode of Vibration and Frequency Mod
Page 11 and 12: Contour-Mode/Lamb-Wave Resonators T
Page 13 and 14: Shear Mode Resonators Quartz MEMS,
Page 15 and 16: From Mechanical to Electrical Varia
Page 17 and 18: Transduction of MEMS Resonators •
Page 19 and 20: Electrostatic Transduction Nguyen,
Page 21 and 22: Electrostrictive Transduction Dubus
Page 23 and 24: Thermal Transduction • Operation
Page 25 and 26: Piezoelectric Transduction complian
Page 27: Piezoelectric Transduction T=250 nm
Page 31 and 32: Equivalent Circuit: 2-port devices
Page 33 and 34: Eq. Ckt: MEMS Resonator vs. SAW/Qua
Page 35 and 36: Figure of Merit (FOM) of a Resonato
Page 37 and 38: MEMS Oscillators • MEMS Oscillato
Page 39 and 40: MEMS Oscillators • MEMS-based osc
Page 41 and 42: Pierce Oscillator: Design Example w
Page 47 and 48: Higher Frequency MEMS Oscillators
Page 49 and 50: Some Other MEMS Oscillators • MEM
Page 51 and 52: Temperature Compensation • Severa
Page 53 and 54: Acceleration Sensitivity • Accele
Page 55 and 56: Fully Integrated MEMS Oscillators
Page 57 and 58: Frequency Accuracy and Stability
Page 59 and 60: Filter Opportunities • IF Filters
Page 61 and 62: Electrically Coupled Filters • El
Page 63 and 64: Ladder Filters with Rectangular Pla
Page 65 and 66: Filter Operation • Three Basic Re
Page 67 and 68: Model Fitting Magnitude of S21 [dB]
Page 69 and 70: Mechanical Coupling C M M M FBW3dB
Page 71 and 72: Acoustic Coupling • Use of acoust
Page 73 and 74: MEMS-Based RF Front-Ends: A Microsy
Page 75 and 76: Modular Integration of Components V
Page 77 and 78: Sub-Sampling RF Channel Select Rece
Page 79 and 80:
Direct Frequency Synthesis • Narr
Page 81 and 82:
Integration of MEMS Resonators and
Page 83 and 84:
CMOS Integrated Solutions • Monol
Page 85 and 86:
MEMS Resonators for Chemical Sensin
Page 87 and 88:
Competitive Advantages over Other N
Page 89 and 90:
Comparison of M/NEMS Resonators •
Page 91 and 92:
LOD From Rubiola’s tutorial on ph
Page 93 and 94:
NEMS Beams as Chemical Sensors Rouk
Page 95 and 96:
FBAR as Chemical Sensor Esteve, Cen
Page 97 and 98:
CMR-S Scaling T LOD • Scaling equ
Page 99 and 100:
250 nm CMR-S Array with Oscillator
Page 101 and 102:
Array of ss-DNA functionalized CMR-
Page 103 and 104:
Concluding Remarks • M/NEMS reson
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MEMS Resonators for Frequency Control and Sensing Applications

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