Basic Research Needs for Solar Energy Utilization - Office of ...
Basic Research Needs for Solar Energy Utilization - Office of ...
Basic Research Needs for Solar Energy Utilization - Office of ...
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
Control over Nucleation and Growth <strong>for</strong> Producing High-quality Thin Films<br />
The growth <strong>of</strong> a thin semiconductor layer on an inexpensive substrate usually results in a<br />
polycrystalline material. The properties <strong>of</strong> polycrystalline materials are challenging to study<br />
because each individual grain is likely to have a different size, orientation, shape, surface<br />
termination, structural quality, and impurity content. A variation in any <strong>of</strong> these attributes can<br />
translate into variations in device per<strong>for</strong>mance, and thus an associated reduction in<br />
manufacturing yield.<br />
The challenge <strong>of</strong> characterizing, modeling, and controlling polycrystalline film properties is<br />
<strong>for</strong>midable. Figure 26 illustrates how control over the nucleation and growth can yield control<br />
over grain size, orientation, and shape, and, there<strong>for</strong>e, material quality. The remarkable advances<br />
in nanostructure synthesis over the past decade provide scientists with tremendous opportunities<br />
<strong>for</strong> controlling the structure <strong>of</strong> thin polycrystalline films. Similar advances in materials<br />
characterization tools provide new opportunities <strong>for</strong> quantifying and thus eventually controlling<br />
grain boundaries, defect states, etc. Understanding and controlling thin-film nucleation and<br />
growth are key <strong>for</strong> both achieving high-per<strong>for</strong>mance photovoltaics and <strong>for</strong> achieving practical<br />
success in the manufacturing environment.<br />
Large oriented grains<br />
Misaligned grains<br />
Sparse, oriented<br />
uni<strong>for</strong>m nuclei Non-uni<strong>for</strong>m, nonoriented<br />
nuclei<br />
Film Nucleation<br />
Figure 26 Controlling nucleation and growth<br />
97<br />
Growth<br />
Improve Understanding <strong>of</strong> Carrier Dynamics at Interfaces<br />
Interfaces between different materials are necessary ingredients <strong>of</strong> every type <strong>of</strong> solar cell. Their<br />
number increases with the number <strong>of</strong> different materials and with the complexity <strong>of</strong> the solar cell<br />
structure. Electronic interface states can fall within the band gap but show up also as resonances<br />
isoenergetic with the electronic bulk states. Recent advances in experimental and theoretical<br />
techniques now give access to real-time measurements and modeling <strong>of</strong> the underlying<br />
interfacial charge carrier dynamics on the relevant time scales. The latter range from a few<br />
femtoseconds to milliseconds. The actual energy distribution <strong>of</strong> hot charge carriers in<br />
semiconductors under solar irradiation with up to a thousand-fold concentration can remain nonthermalized<br />
and thus cannot be characterized by the lattice temperature. A realistic description <strong>of</strong><br />
interfacial loss processes requires (a) a model <strong>for</strong> the respective charge carrier dynamics that is<br />
based on the detailed atomic and electronic structure <strong>of</strong> bulk interface and (b) a sufficiently<br />
detailed time-dependent model calculation that comprises all the relevant electronic levels and all