Mechanics and Tribology of MEMS Materials - prod.sandia.gov ...
Mechanics and Tribology of MEMS Materials - prod.sandia.gov ...
Mechanics and Tribology of MEMS Materials - prod.sandia.gov ...
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Fig. 7.2. <strong>MEMS</strong> die sitting on a flat ground in Pyrex rod, <strong>and</strong> this inside a Pyrex tube (a), <strong>and</strong><br />
these components inside a vial for radiation <strong>and</strong> thermal exposure in controlled<br />
environments (b).<br />
then calculated the contact angle on both sides <strong>of</strong> the drop. These two numbers were usually<br />
identical, but in some cases differed by up to 2 degrees. The average <strong>of</strong> the two numbers was<br />
recorded as the water contact angle for the sample. Two samples were measured for each<br />
experimental condition. This technique was used as a primary screening tool, to identify<br />
samples <strong>of</strong> interest for analysis using other techniques.<br />
Surface chemical information was obtained using x-ray photoelectron spectroscopy<br />
(XPS). A PHI achromatic XPS system (Physical Electronics, Eden Prairie, MN) was used for<br />
analysis. Spectra were digitally acquired using an Al Kα x-ray source (1486.6 eV). A survey<br />
spectrum was collected on each sample, followed by detailed scans using analysis regions that<br />
captured the Si2p, C1s, O1s <strong>and</strong> F1s (for the PFTS) peaks. Si, O <strong>and</strong> F peaks were acquired at<br />
0.2 eV/step, while C was acquired at 0.1 eV/step. After analysis, the spectra were smoothed<br />
using a 19-point Savitsky-Golay algorithm, satellite subtraction was performed, <strong>and</strong> the spectra<br />
were shifted to provide a constant Si2p3/2 peak position at 99.3 eV. Atomic concentrations were<br />
calculated from the detailed scans using h<strong>and</strong>book sensitivity factors. For comparison <strong>of</strong> peak<br />
shapes <strong>and</strong> <strong>of</strong>fsets due to chemical changes in the films, the peaks for a given element were<br />
normalized by peak area <strong>and</strong> plotted with a baseline intensity <strong>of</strong>fset to stagger the peaks.<br />
7.3.3 Friction measurements<br />
(a) (b)<br />
Static friction was determined using the <strong>MEMS</strong> devices shown in Figure 7.1. All<br />
measurements were conducted in laboratory ambient atmosphere (23°C, 13% relative humidity)<br />
using bare die <strong>and</strong> drive signals applied with probes making contact with electrical contact pads<br />
on the device. A DC voltage was applied to the loading actuator to bring the beam into contact<br />
with the post (Figure 7.1b). Normal load is estimated at 10 µN based on the applied voltage <strong>and</strong><br />
displacement <strong>of</strong> the beam. With the load applied, the voltage on the oscillation actuator was<br />
slowly ramped up from zero while acquiring images <strong>of</strong> the beam via the probe station<br />
microscope. In this configuration, the beam remains stationary against the post until sufficient<br />
force is applied by the actuator to overcome the static friction between the beam <strong>and</strong> the post. At<br />
this point, the beam slips. Image processing was used to calculate the displacement <strong>of</strong> the beam<br />
as a function <strong>of</strong> voltage applied to the oscillation actuator. The force at which slip takes place<br />
can be calculated as described by Senft <strong>and</strong> Dugger [7.6], using the lateral stiffness <strong>of</strong> springs in<br />
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