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Mechanics and Tribology of MEMS Materials - prod.sandia.gov ...

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Fig. 7.9. Displacement versus the square <strong>of</strong> applied voltage on oscillation actuator for asdeposited<br />

ODTS <strong>and</strong> the same film exposed to 13%RH air at 300°C. The labels on the<br />

displacement curves indicate the static friction coefficient, µS , calculated based on the<br />

delay in displacement with applied voltage.<br />

7.5 DISCUSSION<br />

Displacement, µm<br />

20<br />

15<br />

10<br />

5<br />

µ s =0.12<br />

as-deposited<br />

300 o C, 10 min., 13% RH air<br />

µ s =0.23<br />

0<br />

0 1000 2000 3000 4000 5000 6000 7000 8000<br />

Voltage 2<br />

Despite the lack <strong>of</strong> detailed fundamental knowledge <strong>of</strong> the mechanisms <strong>of</strong> radiolysis <strong>of</strong><br />

fluoropolymers, the increased sensitivity <strong>of</strong> fluoropolymers to radiation degradation over their<br />

hydrocarbon analogues is well established [7.7]. Although both ODTS <strong>and</strong> PFTS resisted<br />

degradation when exposed to radiation doses <strong>of</strong> 500 krad, this explains the decrease in water<br />

contact angle observed for PFTS films after XPS analysis, where the equivalent dose was<br />

probably several megarads.<br />

The decreased concentration <strong>of</strong> C on ODTS samples heated in air containing water vapor,<br />

accompanied by increased O <strong>and</strong> Si, suggests loss <strong>of</strong> ODTS molecules from the surface or<br />

reorganization <strong>of</strong> the film to increase substrate exposure. Restructuring <strong>of</strong> alkylsilane films on<br />

Si has been observed by atomic force microscopy [7.8]. Agglomerates formed in solution <strong>and</strong><br />

deposited on a Si(100) surface could be reorganized into layered structures upon heating. If the<br />

alkylsilane films form hydrogen-bonded networks as opposed to siloxane bonds to the surface,<br />

heating in the presence <strong>of</strong> water vapor may allow reorganization <strong>of</strong> monolayers to expose the<br />

oxidized silicon surface. Higher resistance <strong>of</strong> fluorocarbons to hydrolysis relative to<br />

hydrocarbons was suggested by Srinivasan et al. [7.4] to explain resistance <strong>of</strong> PFTS films to<br />

degradation upon heating in air while ODTS films exhibited significant decrease in hydrophobic<br />

character. The shoulder on the high binding energy side <strong>of</strong> the C1s spectrum for the sample<br />

heated in humid air suggests presence <strong>of</strong> carbon bound to more electronegative species. This<br />

suggests increased contributions from C-O bonds, being more electronegative than C-C <strong>and</strong> C-H.<br />

Therefore, ODTS molecules can also react with water to form a radial on the surface with<br />

resulting loss <strong>of</strong> carbon.<br />

72

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