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CHEM01200604004 Shri Sanyasinaidu Boddu - Homi Bhabha ...

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lanthanide ions. Doping of lanthanide ions into GaOOH lattice causes structural destruction<br />

due to incorporation of lanthanide ions in between the GaO 6 octahedral layers at the expanse<br />

of hydrogen bonds and the resulting product mainly contains finely mixed Ga(OH) 3 and<br />

Eu(OH) 3 . During heat treatment, Eu 3+ ions can diffuse into the lattice and forms Eu 3+ doped<br />

Ga 2 O 3 .<br />

(a)<br />

(b)<br />

(c)<br />

(d)<br />

Fig.36. TEM images of (a) 0, (b) 0.75, (c) 3 and (d) 5 at % Eu doped β - Ga 2 O 3.<br />

3.5 Effect of heat treatment on luminescence of Ga 2 O 3 :Ln 3+ nanomaterials: Figure 37 (a)<br />

shows the emission spectra of Tb 3+ doped GaOOH, a-Ga 2 O 3 and b-Ga 2 O 3 nanomaterials. All<br />

samples displayed four peaks ~ 489, 543, 588 and 622 nm corresponding to 5 D 4 Æ 7 F 5 6, D 4 Æ<br />

7 F 5 5, D 4 Æ 7 F 4 and 5 D 4 Æ 7 F 3 transitions of Tb 3+ ions. Tb 3+ doped a-Ga 2 O 3 sample shows<br />

80

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