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CHEM01200604004 Shri Sanyasinaidu Boddu - Homi Bhabha ...

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value. The lattice parameters calculated from the XRD patterns increase with increasing In 3+<br />

content in the ample. This is understandable as the ionic size of In 3+ (0.81) is larger than that<br />

of Ga 3+ (0.6) and incorporation of In 3+ at Ga 3+ site leads to lattice expansion thereby shifting<br />

the diffraction peak maximum to lower 2θ value. The broadening of the diffraction peaks can<br />

be attributed to the distortion in the lattice brought about by incorporation of larger ionic radii<br />

In 3+ at the expense of Ga 3+ . Thus based on XRD studies it is confirmed that In 3+ gets<br />

incorporated into the ZnGa 2 O 4 lattice and forms solid solutions of type ZnGa 2-x In x O 4 .<br />

ZnGa 1.5<br />

In 0.5<br />

O 4<br />

Intensity(arb.units)<br />

ZnGa 1.7<br />

In 0.3<br />

O 4<br />

ZnGa 1.8<br />

In 0.2<br />

O 4<br />

ZnGa 1.9<br />

In 0.1<br />

O 4<br />

ZnGa 1.95<br />

In 0.05<br />

O 4<br />

ZnGa 2<br />

O 4<br />

20 30 40 50 60 70<br />

2θ/ ο<br />

Fig.98. XRD patterns of ZnGa 2-x In x O 4 (x = 0, 0.05, 0.1, 0.2, 0.3, 0.5) nanoparticles.<br />

TEM image of ZnGa 1.5 In 0.5 O 4 nanoparticles is shown in Fig.99. Very fine particles<br />

with size in the range of 4-6 nm can be seen in the image. Corresponding SAED pattern is<br />

shown in the inset of the Fig.99 (a). The SAED pattern has been conformity with the<br />

formation of nanocrystalline ZnGa 2-x In x O 4 phase.<br />

Emission spectra of these samples are given in the Fig.100 (a). It is clearly seen that<br />

the emission maximum is shifted towards higher wavelength side from 430 to 455 nm with<br />

increase in the In 3+ content in the sample and this has been attributed to the presence of In 3+<br />

159

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