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CHEM01200604004 Shri Sanyasinaidu Boddu - Homi Bhabha ...

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following section, luminescent properties of some of the above-mentioned materials are<br />

discussed.<br />

A number of studies have been reported on the luminescence aspects of oxides like<br />

ZrO 2 , Ga 2 O 3 , SnO 2 , ZnO, Sb 2 O 3 , ZnGa 2 O 4 , BaSnO 3 etc. ZrO 2 nanomaterials are known to<br />

have host emission in the visible region [43, 44] and emission maximum can be tuned by<br />

varying the particle size. Zhang, et al. [44] have prepared ZrO 2 nanoparticles having narrow<br />

size distribution by the controlled hydrolysis of zirconium butoxide, followed by annealing<br />

over the temperature range of 300-500°C. These authors have observed that by changing the<br />

annealing temperature the emission maximum from ZrO 2 nanoparticles can be tuned. Joy et<br />

al. also observed emission around 390 nm from nanocrystalline ZrO 2 films on UV excitation<br />

and they have attributed this to the defects present in ZrO 2 host [45]. Other investigations<br />

explained luminescence from ZrO 2 nanomaterials as a combined effect of the presence of<br />

impurities as well as defects in the lattice [46, 47].<br />

Similar to ZrO 2 , β and γ forms of Ga 2 O 3 nanomaterials are also known to give strong<br />

emission in the visible region upon UV excitation. β-Ga 2 O 3 is an important wide band gap<br />

(band gap value is 4.9 eV) transparent semiconductor [48, 49] and is a potential candidate for<br />

optoelectronic applications [50, 51]. A number of reports are available on the luminescence<br />

properties of nanoparticles and thin films of β-Ga 2 O 3 . [52-56]. Generally GaOOH is used as<br />

the precursor material for the preparation of different forms of Ga 2 O 3 nanomaterials. Li, et al.<br />

[56] have prepared β-Ga 2 O 3 nanorods from GaOOH nanorods and observed emission around<br />

438 nm upon ultraviolet and low voltage electron beam excitations. The blue emission from<br />

these nanomaterials has been attributed to GaO 6 octahedra present in β-Ga 2 O 3 lattice.<br />

ZnO is a direct band gap semiconductor and has emission in both near UV and visible<br />

region. Many groups have investigated in detail the different types of luminescence centres<br />

present in ZnO nanomaterials [57, 58]. A representative emission spectrum from ZnO<br />

22

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