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Jahresbericht 2005 - IPHT Jena

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92<br />

The varying shades (spectrum from white to<br />

greenish-blue in a colour picture) indicate the different<br />

level of filling and positioning accuracy. In<br />

order to improve the homogeneity a further optimisation<br />

of this technique is required.<br />

Thin film solar cells<br />

For the first time layered laser crystallised (LLC)<br />

thin film solar cells were prepared on borofloat<br />

glass substrates covered with a tantalum pentoxide<br />

layer.<br />

Our standard cell structure is sketched in Fig. E7.<br />

Immediately on top of the borofloat glass sub-<br />

Fig. E7: Design of a standard LLC cell.<br />

strate a multicrystalline silicon layer system with<br />

grains exceeding 100 µm in size is deposited.<br />

The layer system consists of a p + -doped highly<br />

conductive seed layer, a p-doped absorber layer<br />

and an n-doped emitter layer. A metal electrode<br />

acts as a light reflector. The seed layer is prepared<br />

by cw laser crystallisation of amorphous<br />

silicon. The absorber and emitter are prepared by<br />

continuously depositing amorphous silicon on top<br />

of the seed combined with repeated excimer<br />

laser irradiation in order to guarantee epitaxial<br />

growth. In various papers it has been demonstrated<br />

that intermediate layers between the<br />

glass and silicon may increase the cell efficiency<br />

by reducing the reflection loss. Moreover, the barrier<br />

may act as a light trapping structure due to<br />

surface scattering and as a diffusion barrier<br />

against foreign atoms of the glass. In the case of<br />

LLC cells the intermediate layer has to withstand<br />

the laser crystallisation process. Standard layers<br />

INNOVATIONSPROJEKT / INNOVATION PROJECT<br />

usually applied in solar cells such as SnO 2, ZnO<br />

or a-SiN x:H do not meet this requirement.<br />

Because of its suitable optical properties and<br />

high melting point of above 1800 °C we expect<br />

tantalum pentoxide layers to be an interesting<br />

alternative. Therefore, we tested the laser stability<br />

of this material. We demonstrated that on<br />

Ta 2O 5 layers LLC solar cells can be prepared successfully.<br />

However, it turned out that Ta 2O 5 layers<br />

require an excimer laser pretreatment. Without<br />

the pretreatment layer damage was observed<br />

after laser crystallisation of amorphous silicon<br />

due to the formation of gas bubbles. Moreover,<br />

due to the laser pretreatment the Ta 2O 5 layer surface<br />

roughens so that increased light scattering<br />

is observed which is beneficial for the solar cell.<br />

In Fig. E8 a current-voltage diagram of a 2 µm<br />

thick cell with a tantalum pentoxide intermediate<br />

layer is shown, as compared to a standard cell. In<br />

both cases no metal reflector for light trapping<br />

was present. Even though the Ta 2O 5 cell has inferior<br />

properties as compared to the standard cell it<br />

is still a positive result. It was demonstrated that<br />

the intermediate layer has the desired properties.<br />

In order to improve the cell parameters the<br />

excimer laser pretreatment has to be optimised<br />

so that the crystal quality of the silicon is<br />

increased to that of the standard cells.<br />

Fig. E8: I–V-diagram of a LLC cell with tantalum<br />

pentoxide intermediate layer (full line) as compared<br />

to a standard LLC cell (broken line).

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