Design, Fabrication and Characterization of a Microwave Resonator ...

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List of Figures5.4 Transmission S 21 of R25 on Silicon (a) at different temperatures (b) enlargementof transmission at resonance at 4 K. . . . . . . . . . . . . . . . . . . 435.5 Transmission S 21 and reflection S 22 and S 11 of R25 on Silicon at 4 K. . . . . 445.6 Transmission S 21 of R25 on Silicon at 4 K with a fundamental resonance at6.15 GHz and marked harmonics at 12.3 GHz and 18.4 GHz. . . . . . . . . 445.7 Transmission S 21 of R25 on Silicon at 4 K: Phase shift (a) and magnitude (b)at resonance. The data was recorded with calibration including the cablesinside the cryostat. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 455.8 Transmission S 21 of R25 on Silicon: Distortion of resonance peak with increasinginput power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 465.9 Comparison of transmission S 21 of R25 on Silicon and Sapphire. . . . . . . 475.10 Comparison of transmission S 21 of R25 and R27 on Silicon at 4 K. . . . . . 485.11 (a) Transmission S 21 of R27 on Silicon at different temperatures, (b) dependenceof resonance frequency on temperature. . . . . . . . . . . . . . . . . 495.12 Overcoupled capacitance of R21. . . . . . . . . . . . . . . . . . . . . . . . 505.13 Transmission S 21 of R21 on Silicon at the resonance frequency at 4 K, below1.3 K and at 17 mK. Comparison of quality factors. . . . . . . . . . . . . . 515.14 Transmission S 21 and reflection S 22 and S 11 of R21 on Silicon at 4 K. . . . . 515.15 Transmission S 21 of R21 on Silicon at 4 K with fundamental resonance at6.42 GHz and marked harmonics at 12.85 GHz and 19.26 GHz. . . . . . . . 525.16 Transmission S 21 of R21 on Silicon: Distortion of resonance peak with increasinginput power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525.17 (a) Transmission S 21 of R21 on Silicon at different temperatures, (b) dependenceof the resonance frequency on temperature, (c) dependence of thequality factor on temperature. . . . . . . . . . . . . . . . . . . . . . . . . . 535.18 Comparison of transmission S 21 of R21 on Silicon and Sapphire. . . . . . . 545.19 Transmission S 21 of R36 on Silicon at 4 K and 1.5 K. . . . . . . . . . . . . 555.20 Transmission S 21 and reflection S 22 and S 11 of R36 on Silicon at 4 K. . . . . 565.21 Transmission S 21 of R36 on Silicon at 4 K with full calibrated cables: Phaseshift (a) and magnitude (b) at resonance. . . . . . . . . . . . . . . . . . . . 565.22 Measured resonance frequency versus coupling capacitance of all designs. . 575.23 Measured quality factor versus coupling capacitance of all designs. . . . . . 586.1 Structure in the gold plated box with two-ports as simulated in Sonnet . . . 616.2 (a) Meshing done by Sonnet in the upper half of the resonator, due to theresolution of the picture no inner strip is visible in the lower range of thegraph (b) enlargement of the white boxed region of (a), one can see themeshing near the inner strip and the gap. . . . . . . . . . . . . . . . . . . . 626.3 Simulation of the current distribution of T21 at the ground plane resonancefrequency of 5.435 GHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . 626.4 Simulation of the resonator R24 (a) Current distribution at the resonance at6.485 GHz, (b) Backward transmission S 12 and reflection S 11 . . . . . . . . . 636.5 Current distribution for T1 at the ground plane resonance frequency of 5.56 GHz. 6580
List of Figures6.6 Forward and backward transmission S 21 and S 12 and forward and backwardreflection S 11 and S 22 of R21 simulated at the Institute of Nanoelectronics. . 666.7 Simulated transmission S 21 of R21 with increasing density of probe frequencies.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 676.8 Comparison between measurement and simulation of the transmission S 21of R21 on Silicon. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6781
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Contents5.2.3 R27 on Silicon . . .
Page 6 and 7:
1 Motivation and Outlinethe antinod
Page 8 and 9:
2 Theoretical Description of a CPW
Page 10 and 11:
Page 12 and 13:
Page 14:
Page 19 and 20:
2.2 Including Superconductivity in
Page 21 and 22:
2.2 Including Superconductivity in
Page 23 and 24:
2.3 Microwave Resonators2.3.2 Quali
Page 25 and 26:
2.3 Microwave ResonatorsFigure 2.11
Page 27 and 28:
2.3 Microwave ResonatorsFigure 2.13
Page 29 and 30:
2.4 The Scattering MatrixThe first
Page 31 and 32:
3 Designs Procedure for the Resonat
Page 33 and 34: 3.3 ConnectorsFigure 3.1: Coupling
Page 35 and 36: 4 Fabrication and Measurement Setup
Page 37 and 38: 4.2 Measurement SetupDevelop Resist
Page 39 and 40: 4.2 Measurement SetupFigure 4.3: Me
Page 41 and 42: 4.3 Calibration4.3 CalibrationIn or
Page 43 and 44: 5 MeasurementsThe first part of thi
Page 45 and 46: 5.1 First Experimentsname design W
Page 47 and 48: 5.2 Measurements - Design 1Figure 5
Page 49 and 50: 5.2 Measurements - Design 1The adva
Page 51 and 52: 5.2 Measurements - Design 15.2.2 R2
Page 53 and 54: 5.2 Measurements - Design 1Figure 5
Page 55 and 56: 5.3 Measurements - Yale DesignFigur
Page 57 and 58: 5.3 Measurements - Yale DesignFigur
Page 59 and 60: 5.4 Measurement - Design 2: R36 on
Page 61 and 62: 5.5 Discussion of the Experimental
Page 63 and 64: 5.5 Discussion of the Experimental
Page 65 and 66: 6 SimulationsThis chapter gives a b
Page 67 and 68: 6.1 Simulations in SonnetFigure 6.4
Page 69 and 70: 6.1 Simulations in SonnetFigure 6.5
Page 71 and 72: 6.2 Simulations Done at the Institu
Page 73 and 74: 7 Conclusion and OutlookThree centr
Page 75 and 76: A Specimen OverviewDesigns for Rose
Page 77 and 78: B Masks73
Page 79 and 80: B.2 Mask for Probing StationB.2 Mas
Page 81 and 82: Bibliography[1] INFORMATIK: Quanten
Page 83: List of Figures2.1 Different realiz
Page 87 and 88: List of Tables2.1 Values where (2.1
Page 89: DanksagungVor allem möchte ich mic
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