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96 Results of the specimen. Zones apparent around the existing grains without additional nucleation are direct proof of the depletion region model. In the following chapter these findings will be considered and a model will be derived explaining the results.
5 Discussion Two of the most important experimental findings in the aluminum-induced layer exchange process are (i) the suppression of nucleation leading to the formation of large grained poly-Si layers and (ii) the formation of a preferential orientation in these layers. Within this chapter both these findings are discussed. The model adapted by O. Nast [53] from Ottaviani et al. [40] was extended by Widenborg et al. [55]. The considerations made within this chapter aim at adding further details to this model. At the beginning of this chapter the very basic, existing model is recalled in Fig. 5.1. On top of the glass substrate the Al (light) and the a-Si (dark) layers are separated by the interface layer (black). The steps of the ALILE process are: (1) Si diffuses across the interface layer into the Al layer. (2) Si diffuses within the Al layer. (3) Si nucleates within the Al layer. (4) Si grains grow. (5) Al diffuses across the interface layer into the initial a-Si layer. In this chapter it will be shown that the process steps (1) - (4) depend on the silicon concentration within the Al layer. Thus this parameter is very important. Figure 5.1: Scheme of the existing ALILE model separated into 5 major steps: (1) Diffu- sion of Si across the interlayer; (2) diffusion of Si within the Al layer; (3) nucleation; (4) grain growth; (5) diffusion of Al across the interlayer.
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Nucleation and growth during the fo
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"Our ignorance is not so vast as ou
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Zusammenfassung Dünne Schichten au
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• Temperatureprofile mit hoher En
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3.2 In-situ optical microscopy . .
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1 Introduction ’Solar power is ho
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por deposition (PECVD) achieved par
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phous silicon interface layer is ex
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2 State of the art This chapter giv
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2.1 Kinetics of phase change 9 Figu
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2.1 Kinetics of phase change 11 [e
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2.2 Solid Phase Crystallization (SP
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2.2 Solid Phase Crystallization (SP
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2.3 Metal-Induced Crystallization (
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2.4 Aluminum-Induced Layer Exchange
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2.5 Current research involving ALIL
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3 Experimental This thesis is focus
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3.1 Sample preparation 39 does not
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3.1 Sample preparation 41 � �
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3.2 In-situ optical microscopy 43 m
Page 61 and 62: 3.2 In-situ optical microscopy 45 B
Page 63 and 64: 3.3 Electron Back Scatter Diffracti
Page 65 and 66: 4 Results In order to understand an
Page 67 and 68: 4.1 Interlayer 51 (a) (b) Figure 4.
Page 69 and 70: 4.1 Interlayer 53 Figure 4.2: TEM c
Page 71 and 72: 4.1 Interlayer 55 c o u n ts [a .u
Page 73 and 74: 4.1 Interlayer 57 R C [% ] 1 0 0 8
Page 75 and 76: 4.1 Interlayer 59 � � ��
Page 77 and 78: 4.1 Interlayer 61 � � ��
Page 79 and 80: 4.1 Interlayer 63 -2 ] N G [m m 8 6
Page 81 and 82: 4.1 Interlayer 65 TA = 450 °C TA =
Page 83 and 84: 4.1 Interlayer 67 (111) (100) (110)
Page 85 and 86: 4.1 Interlayer 69 4.1.2 Molybdenum
Page 87 and 88: 4.1 Interlayer 71 Fig. 4.17 optical
Page 89 and 90: 4.1 Interlayer 73 R C [% ] 1 0 0 8
Page 91 and 92: 4.2 Temperature profiles 75 face la
Page 93 and 94: 4.2 Temperature profiles 77 � �
Page 95 and 96: 4.2 Temperature profiles 79 R C [%
Page 97 and 98: 4.2 Temperature profiles 81 a small
Page 99 and 100: 4.2 Temperature profiles 83 � �
Page 101 and 102: 4.2 Temperature profiles 85 (a) (b)
Page 107 and 108: 4.2 Temperature profiles 91 ��
Page 109 and 110: 4.2 Temperature profiles 93 in. Thu
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Page 115 and 116: 5.1 Definition of three crucial Si
Page 125 and 126: 5.2 The ALILE process in the phase
Page 127 and 128: 5.2 The ALILE process in the phase
Page 129 and 130: 5.3 Depletion regions in the ALILE
Page 131 and 132: 5.4 Comparison of the qualitative m
Page 137 and 138: 5.5 Preferential orientation model
Page 145 and 146: 6 Conclusions In the aluminum-induc
Page 147 and 148: A Preferential orientation calculat
Page 149 and 150: The area of the base of the pyramid
Page 151 and 152: B Abbreviations, symbols and units
Page 153 and 154: symbol unit meaning ∆G a eV activ
Page 155 and 156: Bibliography [1] M. Rogol, S. Doi,
Page 157 and 158: [20] R.W. Bower, R. Baron, J.W. May
Page 159 and 160: [38] J. Jang, J.Y. Oh, S.K. Kim, Y.
Page 161 and 162: [58] N.-P. Harder, T. Puzzer, P. Wi
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[72] G. Ekanayake, S. Summers, and
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[87] H.R. Philipp and E.A. Taft. An
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list of publications journal papers
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B. Rau, J. Klein, J. Schneider, E.
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(2002), 87. S. Gall, M. Muske, I. S
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tion. Special thank’s go to Dr. M
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10/95-09/98 student electrical engi
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(a) 100 µm - Helmholtz-Zentrum Berlin

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