(a) 100 µm - Helmholtz-Zentrum Berlin

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72 Results (a) (b) (c) 100 µm 100 µm 100 µm Figure 4.17: Series of optical micrographs of the initial glass/Al interface showing a large dendritic grain growing during annealing of a specimen with 48 nm Mo interlayer at 550 °C after (a) 25 min, (b) 35 min and (c) 45 min.
4.1 Interlayer 73 R C [% ] 1 0 0 8 0 6 0 � � � 4 0 2 0 T A �� 0 �� 0 3 0 6 0 9 0 1 2 0 1 5 0 1 8 0 � �� Figure 4.18: Results for 12 nm molybdenum interface. Crystallized fraction RC vs. annealing time tA at different annealing temperatures TA. � � �� 6 4 2 0 � 4 6 0 4 8 0 5 0 0 5 2 0 � �� 6 0 4 0 2 0 0 � � �� Figure 4.19: Results for 12 nm molybdenum interface. Nucleation density NG (solid circles) and estimated grain size dG (open circles) versus annealing temperature TA.
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Nucleation and growth during the fo
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"Our ignorance is not so vast as ou
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Zusammenfassung Dünne Schichten au
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• Temperatureprofile mit hoher En
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3.2 In-situ optical microscopy . .
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1 Introduction ’Solar power is ho
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por deposition (PECVD) achieved par
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phous silicon interface layer is ex
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2 State of the art This chapter giv
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2.1 Kinetics of phase change 9 Figu
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2.1 Kinetics of phase change 11 [e
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2.2 Solid Phase Crystallization (SP
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2.2 Solid Phase Crystallization (SP
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2.3 Metal-Induced Crystallization (
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2.3 Metal-Induced Crystallization (
Page 37 and 38: 2.3 Metal-Induced Crystallization (
Page 39 and 40: 2.4 Aluminum-Induced Layer Exchange
Page 45 and 46: 2.5 Current research involving ALIL
Page 53 and 54: 3 Experimental This thesis is focus
Page 55 and 56: 3.1 Sample preparation 39 does not
Page 57 and 58: 3.1 Sample preparation 41 � �
Page 59 and 60: 3.2 In-situ optical microscopy 43 m
Page 61 and 62: 3.2 In-situ optical microscopy 45 B
Page 63 and 64: 3.3 Electron Back Scatter Diffracti
Page 65 and 66: 4 Results In order to understand an
Page 67 and 68: 4.1 Interlayer 51 (a) (b) Figure 4.
Page 69 and 70: 4.1 Interlayer 53 Figure 4.2: TEM c
Page 71 and 72: 4.1 Interlayer 55 c o u n ts [a .u
Page 73 and 74: 4.1 Interlayer 57 R C [% ] 1 0 0 8
Page 75 and 76: 4.1 Interlayer 59 � � ��
Page 77 and 78: 4.1 Interlayer 61 � � ��
Page 79 and 80: 4.1 Interlayer 63 -2 ] N G [m m 8 6
Page 81 and 82: 4.1 Interlayer 65 TA = 450 °C TA =
Page 83 and 84: 4.1 Interlayer 67 (111) (100) (110)
Page 85 and 86: 4.1 Interlayer 69 4.1.2 Molybdenum
Page 87: 4.1 Interlayer 71 Fig. 4.17 optical
Page 91 and 92: 4.2 Temperature profiles 75 face la
Page 93 and 94: 4.2 Temperature profiles 77 � �
Page 95 and 96: 4.2 Temperature profiles 79 R C [%
Page 97 and 98: 4.2 Temperature profiles 81 a small
Page 99 and 100: 4.2 Temperature profiles 83 � �
Page 101 and 102: 4.2 Temperature profiles 85 (a) (b)
Page 107 and 108: 4.2 Temperature profiles 91 ��
Page 109 and 110: 4.2 Temperature profiles 93 in. Thu
Page 111 and 112: 4.2 Temperature profiles 95 ��
Page 113 and 114: 5 Discussion Two of the most import
Page 115 and 116: 5.1 Definition of three crucial Si
Page 125 and 126: 5.2 The ALILE process in the phase
Page 127 and 128: 5.2 The ALILE process in the phase
Page 129 and 130: 5.3 Depletion regions in the ALILE
Page 131 and 132: 5.4 Comparison of the qualitative m
Page 137 and 138: 5.5 Preferential orientation model
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5.5 Preferential orientation model
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6 Conclusions In the aluminum-induc
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A Preferential orientation calculat
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The area of the base of the pyramid
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B Abbreviations, symbols and units
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symbol unit meaning ∆G a eV activ
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Bibliography [1] M. Rogol, S. Doi,
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[20] R.W. Bower, R. Baron, J.W. May
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[38] J. Jang, J.Y. Oh, S.K. Kim, Y.
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[58] N.-P. Harder, T. Puzzer, P. Wi
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[72] G. Ekanayake, S. Summers, and
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[87] H.R. Philipp and E.A. Taft. An
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list of publications journal papers
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B. Rau, J. Klein, J. Schneider, E.
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(2002), 87. S. Gall, M. Muske, I. S
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tion. Special thank’s go to Dr. M
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10/95-09/98 student electrical engi
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