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<strong>100</strong> Discussion characteristic eutectic point. (b) Magnification of the Al rich part of the phase diagram. At the eutectic temperature (Teu = 850 K) solid Al can dissolve up to 1.5 at.% Si. Figure 5.2: Phase diagram of the Al/Si system [96]. (a) Entire phase diagram. At 12.2 % Si in the Al at a temperature of 850 K is the (a) (b)
5.1 Definition of three crucial Si concentrations in Al 101 adjust their mixing ratio according to the phase diagram and their volume fraction according to the overall concentrations. For example when cooling a liquid, eutectic mixture of Al (87.8 at.%) and Si (12.2 at.%) an Al and Si phase will solidify at the eutectic temperature. The solid Al parts contain about 1.5 at.% silicon. The solid Si parts include below 0.01 at.% of Al. In order to achieve this in a eutectic alloy the volume fractions of solid Si and solid Al adjust accordingly. The coexistence lines in the phase diagram correspond to the thermodynamically most stable, crystalline phases of Al and Si. The coexistence line between the Al and the Al+Si phases in Fig. 5.2(b) is the coexistence line of Al and Si. Two phases are in an equilibrium when the chemical potentials are the same. The chemical potential µj is defined as: µj = � � dG dNj T,V,Ni�=j , (5.1) where G is the Gibbs energy and Nj is the number of particles. The chemical potential is the energy needed to add one particle to a system without a change in temperature T , volume V or the number of any other particle Ni�=j. In a solution the chemical potential of each species is a function of the concentration. In the case of Si dissolved in Al: µSi (CSi) = µSi,0 + kT ln CSi , (5.2) where CSi is the silicon concentration, µSi,0 is the chemical potential of Si at the saturation concentration CS and k is Boltzmann’s constant. As mentioned above the coexistence line from the phase diagram (Fig. 5.2(b)) cor- responds to the equilibrium of Si dissolved in Al with the crystalline Si phase. The corresponding concentration is referred to as the solubility limit or the saturation concentration CS. If the concentration of Si CSi within Al in contact with Si is CS
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Nucleation and growth during the fo
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"Our ignorance is not so vast as ou
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Zusammenfassung Dünne Schichten au
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• Temperatureprofile mit hoher En
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3.2 In-situ optical microscopy . .
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1 Introduction ’Solar power is ho
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por deposition (PECVD) achieved par
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phous silicon interface layer is ex
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2 State of the art This chapter giv
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2.1 Kinetics of phase change 9 Figu
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2.1 Kinetics of phase change 11 [e
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2.2 Solid Phase Crystallization (SP
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2.2 Solid Phase Crystallization (SP
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2.3 Metal-Induced Crystallization (
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2.4 Aluminum-Induced Layer Exchange
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2.5 Current research involving ALIL
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3 Experimental This thesis is focus
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3.1 Sample preparation 39 does not
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3.1 Sample preparation 41 � �
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3.2 In-situ optical microscopy 43 m
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3.2 In-situ optical microscopy 45 B
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3.3 Electron Back Scatter Diffracti
Page 65 and 66: 4 Results In order to understand an
Page 67 and 68: 4.1 Interlayer 51 (a) (b) Figure 4.
Page 69 and 70: 4.1 Interlayer 53 Figure 4.2: TEM c
Page 71 and 72: 4.1 Interlayer 55 c o u n ts [a .u
Page 73 and 74: 4.1 Interlayer 57 R C [% ] 1 0 0 8
Page 75 and 76: 4.1 Interlayer 59 � � ��
Page 77 and 78: 4.1 Interlayer 61 � � ��
Page 79 and 80: 4.1 Interlayer 63 -2 ] N G [m m 8 6
Page 81 and 82: 4.1 Interlayer 65 TA = 450 °C TA =
Page 83 and 84: 4.1 Interlayer 67 (111) (100) (110)
Page 85 and 86: 4.1 Interlayer 69 4.1.2 Molybdenum
Page 87 and 88: 4.1 Interlayer 71 Fig. 4.17 optical
Page 89 and 90: 4.1 Interlayer 73 R C [% ] 1 0 0 8
Page 91 and 92: 4.2 Temperature profiles 75 face la
Page 93 and 94: 4.2 Temperature profiles 77 � �
Page 95 and 96: 4.2 Temperature profiles 79 R C [%
Page 97 and 98: 4.2 Temperature profiles 81 a small
Page 99 and 100: 4.2 Temperature profiles 83 � �
Page 101 and 102: 4.2 Temperature profiles 85 (a) (b)
Page 107 and 108: 4.2 Temperature profiles 91 ��
Page 109 and 110: 4.2 Temperature profiles 93 in. Thu
Page 111 and 112: 4.2 Temperature profiles 95 ��
Page 113 and 114: 5 Discussion Two of the most import
Page 115: 5.1 Definition of three crucial Si
Page 119 and 120: 5.1 Definition of three crucial Si
Page 125 and 126: 5.2 The ALILE process in the phase
Page 127 and 128: 5.2 The ALILE process in the phase
Page 129 and 130: 5.3 Depletion regions in the ALILE
Page 131 and 132: 5.4 Comparison of the qualitative m
Page 137 and 138: 5.5 Preferential orientation model
Page 145 and 146: 6 Conclusions In the aluminum-induc
Page 147 and 148: A Preferential orientation calculat
Page 149 and 150: The area of the base of the pyramid
Page 151 and 152: B Abbreviations, symbols and units
Page 153 and 154: symbol unit meaning ∆G a eV activ
Page 155 and 156: Bibliography [1] M. Rogol, S. Doi,
Page 157 and 158: [20] R.W. Bower, R. Baron, J.W. May
Page 159 and 160: [38] J. Jang, J.Y. Oh, S.K. Kim, Y.
Page 161 and 162: [58] N.-P. Harder, T. Puzzer, P. Wi
Page 163 and 164: [72] G. Ekanayake, S. Summers, and
Page 165 and 166: [87] H.R. Philipp and E.A. Taft. An
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list of publications journal papers
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B. Rau, J. Klein, J. Schneider, E.
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(2002), 87. S. Gall, M. Muske, I. S
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tion. Special thank’s go to Dr. M
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10/95-09/98 student electrical engi
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(a) 100 µm - Helmholtz-Zentrum Berlin

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