(a) 100 µm - Helmholtz-Zentrum Berlin

More documents

Recommendations

Info

$Math.-Nat. - Papier - Helmholtz-Zentrum Berlin$

[96] Al-si (aluminium - silicon). In B. Predel, editor, Group IV Physical Chemistry, volume 5. Landoldt-Börnstein, 1991. [97] C. Zener. Theory of growth of spherical precipitates from solid solution. J. Appl. Phys., 40:950–953, 1949. [98] G. J. van Gurp. Diffusion-limited si precipitation in evaporated al/si films. J. Appl. Phys., 44(5):2040–2050, 1973. [99] D.J. Eaglesham, A.E. White, L.C. Feldman, N. Mriya, and D.C. Jacobson. Equlibrium shape of si. Phys. Rev. Lett., 70(11):1643–1646, 1993. [<strong>100</strong>] L.P.H. Jeurgens, W.G. Sloof, F.D. Tichelar, and E.J. Mittemeijer. Structure and morphology of aluminium-oxide films formed by thermal oxidation of aluminium. Thin solid films, 418:89–101, 2002.
list of publications journal papers J. Schneider, J. Klein, M. Muske, S. Gall, and W. Fuhs, ’Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si’, Applied Physics Letters, accepted. J. Schneider, R. Heimburger, J. Klein, M. Muske, S. Gall, and W. Fuhs, ’Aluminum- induced crystallization of amorphous silicon: influence of temperature profiles’, Thin Solid Films, article in press. J. Schneider, J. Klein, M. Muske, S. Gall, and W. Fuhs, ’Aluminum-induced crystallization of amorphous silicon: Preparation effect on growth kinetics’, J. Non-Cryst. Solids 338-340, (2004), 127. B. Rau, I. Sieber, J. Schneider, M. Muske, M. Stöger-Pollach, P. Schattschneider, S. Gall, and W. Fuhs, ’Low-temperature Si epitaxy on large-grained polycrystalline seed layers by electron-cyclotron resonance chemical vapor deposition’, J. Cryst. Growth 270, (2004), 396. J. Klein, J. Schneider, M. Muske, S. Gall, and W. Fuhs, ’Aluminium-induced crys- tallisation of amorphous silicon: influence of the aluminium layer on the process’, Thin Solid Films 451-452, (2004), 481. W. Fuhs, S. Gall, B. Rau, M. Schmidt, and J. Schneider, ’A novel route to a polycrystalline silicon thin-film solar cell’, Solar Energy 77, (2004), 961.
Page 1:
Nucleation and growth during the fo
Page 5:
"Our ignorance is not so vast as ou
Page 9 and 10:
Zusammenfassung Dünne Schichten au
Page 11:
• Temperatureprofile mit hoher En
Page 14 and 15:
3.2 In-situ optical microscopy . .
Page 17 and 18:
1 Introduction ’Solar power is ho
Page 19 and 20:
por deposition (PECVD) achieved par
Page 21 and 22:
phous silicon interface layer is ex
Page 23 and 24:
2 State of the art This chapter giv
Page 25 and 26:
2.1 Kinetics of phase change 9 Figu
Page 27 and 28:
2.1 Kinetics of phase change 11 [e
Page 29 and 30:
2.2 Solid Phase Crystallization (SP
Page 31 and 32:
2.2 Solid Phase Crystallization (SP
Page 33 and 34:
2.3 Metal-Induced Crystallization (
Page 35 and 36:
Page 37 and 38:
Page 39 and 40:
2.4 Aluminum-Induced Layer Exchange
Page 41 and 42:
Page 43 and 44:
Page 45 and 46:
2.5 Current research involving ALIL
Page 47 and 48:
Page 49 and 50:
Page 51 and 52:
Page 53 and 54:
3 Experimental This thesis is focus
Page 55 and 56:
3.1 Sample preparation 39 does not
Page 57 and 58:
3.1 Sample preparation 41 � �
Page 59 and 60:
3.2 In-situ optical microscopy 43 m
Page 61 and 62:
3.2 In-situ optical microscopy 45 B
Page 63 and 64:
3.3 Electron Back Scatter Diffracti
Page 65 and 66:
4 Results In order to understand an
Page 67 and 68:
4.1 Interlayer 51 (a) (b) Figure 4.
Page 69 and 70:
4.1 Interlayer 53 Figure 4.2: TEM c
Page 71 and 72:
4.1 Interlayer 55 c o u n ts [a .u
Page 73 and 74:
4.1 Interlayer 57 R C [% ] 1 0 0 8
Page 75 and 76:
4.1 Interlayer 59 � � ��
Page 77 and 78:
4.1 Interlayer 61 � � ��
Page 79 and 80:
4.1 Interlayer 63 -2 ] N G [m m 8 6
Page 81 and 82:
4.1 Interlayer 65 TA = 450 °C TA =
Page 83 and 84:
4.1 Interlayer 67 (111) (100) (110)
Page 85 and 86:
4.1 Interlayer 69 4.1.2 Molybdenum
Page 87 and 88:
4.1 Interlayer 71 Fig. 4.17 optical
Page 89 and 90:
4.1 Interlayer 73 R C [% ] 1 0 0 8
Page 91 and 92:
4.2 Temperature profiles 75 face la
Page 93 and 94:
4.2 Temperature profiles 77 � �
Page 95 and 96:
4.2 Temperature profiles 79 R C [%
Page 97 and 98:
4.2 Temperature profiles 81 a small
Page 99 and 100:
4.2 Temperature profiles 83 � �
Page 101 and 102:
4.2 Temperature profiles 85 (a) (b)
Page 103 and 104:
Page 105 and 106:
Page 107 and 108:
4.2 Temperature profiles 91 ��
Page 109 and 110:
4.2 Temperature profiles 93 in. Thu
Page 111 and 112:
4.2 Temperature profiles 95 ��
Page 113 and 114:
5 Discussion Two of the most import
Page 115 and 116: 5.1 Definition of three crucial Si
Page 125 and 126: 5.2 The ALILE process in the phase
Page 127 and 128: 5.2 The ALILE process in the phase
Page 129 and 130: 5.3 Depletion regions in the ALILE
Page 131 and 132: 5.4 Comparison of the qualitative m
Page 137 and 138: 5.5 Preferential orientation model
Page 145 and 146: 6 Conclusions In the aluminum-induc
Page 147 and 148: A Preferential orientation calculat
Page 149 and 150: The area of the base of the pyramid
Page 151 and 152: B Abbreviations, symbols and units
Page 153 and 154: symbol unit meaning ∆G a eV activ
Page 155 and 156: Bibliography [1] M. Rogol, S. Doi,
Page 157 and 158: [20] R.W. Bower, R. Baron, J.W. May
Page 159 and 160: [38] J. Jang, J.Y. Oh, S.K. Kim, Y.
Page 161 and 162: [58] N.-P. Harder, T. Puzzer, P. Wi
Page 163 and 164: [72] G. Ekanayake, S. Summers, and
Page 165: [87] H.R. Philipp and E.A. Taft. An
Page 169 and 170: B. Rau, J. Klein, J. Schneider, E.
Page 171: (2002), 87. S. Gall, M. Muske, I. S
Page 174 and 175: tion. Special thank’s go to Dr. M
Page 176: 10/95-09/98 student electrical engi
show all

(a) 100 µm - Helmholtz-Zentrum Berlin

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?