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16 State of the art Figure 2.6: Sketch showing the octahedron/double pyramid formation in silicon crystallization. Spinella et al. [12] suggest that the critical clusters in solid phase crystallization Si crystallites embedded in the a-Si matrix assume the shape of a double pyramid with 111 faces, ledges and tips. critical cluster size was estimated to about 45 atoms during the crystallization of spherical clusters. In order to reduce the total surface energy the surfaces of low- est energy are formed. Fig. 2.6 illustrates the case for silicon. As can be seen Si forms an octahedron (double pyramid) with (111) surfaces. The (111) surfaces are stabilized and growth takes place along the (110) ledges of the pyramid covering the (111) surfaces layer by layer. This consideration is used for modeling later (chapter 5). In the early 1980s, research on silicon on insulator (SOI) technology for MOSFETS led to an increased interest in solid phase crystallization. At the end of this decade the application of thin film transistors (TFT) in displays and sensors led to the first solid phase crystallization experiments on foreign substrates, like glass. In the early 1990, Sanyo investigated the possible use of SPC for solar cells. Even though promising results where obtained with a laboratory cell efficiency of η = 9.2 % on an area of 1 cm 2 [8] further efforts were quitted for reasons unknown. In
2.3 Metal-Induced Crystallization (MIC) 17 Figure 2.7: Crystalline silicon thin film module made by SPC (source: http://www.pacificsolar.com.au) January 2004 CSG Solar AG (formerly Pacific Solar Ltd.) set the cornerstone for a new factory in Thalheim, Saxony-Anhalt. CSG is the abbreviation for crystalline silicon on glass. It is the first company attempting to produce solar cells made by solid phase crystallization (SPC) on an industrial scale. Prototypes produced by Pacific Solar (Fig. 2.7) have reached a module efficiency of above 8 % on an area of 96 cm 2 [28]. It is believed that a module efficiency of about 10 % can be reached at very low cost. These efficiencies are still below the tandem solar cells efficiencies described above [7]. Besides the efficiency and the fabrication cost of a module the yield is a very crucial parameter which determines success or failure of the thin film technologies because of the large areas processed at a time. 2.3 Metal-Induced Crystallization (MIC) At about the same time SPC was investigated for the first time, contact metalliza- tion in integrated circuits was found to dissolve silicon. This process was found to be enhanced in case of heated metal-silicon contacts [29].
Page 1: Nucleation and growth during the fo
Page 5: "Our ignorance is not so vast as ou
Page 9 and 10: Zusammenfassung Dünne Schichten au
Page 11: • Temperatureprofile mit hoher En
Page 14 and 15: 3.2 In-situ optical microscopy . .
Page 17 and 18: 1 Introduction ’Solar power is ho
Page 19 and 20: por deposition (PECVD) achieved par
Page 21 and 22: phous silicon interface layer is ex
Page 23 and 24: 2 State of the art This chapter giv
Page 25 and 26: 2.1 Kinetics of phase change 9 Figu
Page 27 and 28: 2.1 Kinetics of phase change 11 [e
Page 29 and 30: 2.2 Solid Phase Crystallization (SP
Page 31: 2.2 Solid Phase Crystallization (SP
Page 35 and 36: 2.3 Metal-Induced Crystallization (
Page 37 and 38: 2.3 Metal-Induced Crystallization (
Page 39 and 40: 2.4 Aluminum-Induced Layer Exchange
Page 45 and 46: 2.5 Current research involving ALIL
Page 53 and 54: 3 Experimental This thesis is focus
Page 55 and 56: 3.1 Sample preparation 39 does not
Page 57 and 58: 3.1 Sample preparation 41 � �
Page 59 and 60: 3.2 In-situ optical microscopy 43 m
Page 61 and 62: 3.2 In-situ optical microscopy 45 B
Page 63 and 64: 3.3 Electron Back Scatter Diffracti
Page 65 and 66: 4 Results In order to understand an
Page 67 and 68: 4.1 Interlayer 51 (a) (b) Figure 4.
Page 69 and 70: 4.1 Interlayer 53 Figure 4.2: TEM c
Page 71 and 72: 4.1 Interlayer 55 c o u n ts [a .u
Page 73 and 74: 4.1 Interlayer 57 R C [% ] 1 0 0 8
Page 75 and 76: 4.1 Interlayer 59 � � ��
Page 77 and 78: 4.1 Interlayer 61 � � ��
Page 79 and 80: 4.1 Interlayer 63 -2 ] N G [m m 8 6
Page 81 and 82: 4.1 Interlayer 65 TA = 450 °C TA =
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4.1 Interlayer 67 (111) (100) (110)
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4.1 Interlayer 69 4.1.2 Molybdenum
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4.1 Interlayer 71 Fig. 4.17 optical
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4.1 Interlayer 73 R C [% ] 1 0 0 8
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4.2 Temperature profiles 75 face la
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4.2 Temperature profiles 77 � �
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4.2 Temperature profiles 79 R C [%
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4.2 Temperature profiles 81 a small
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4.2 Temperature profiles 83 � �
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4.2 Temperature profiles 85 (a) (b)
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Page 105 and 106:
Page 107 and 108:
4.2 Temperature profiles 91 ��
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4.2 Temperature profiles 93 in. Thu
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4.2 Temperature profiles 95 ��
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5 Discussion Two of the most import
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5.1 Definition of three crucial Si
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5.2 The ALILE process in the phase
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5.2 The ALILE process in the phase
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5.3 Depletion regions in the ALILE
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5.4 Comparison of the qualitative m
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5.5 Preferential orientation model
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6 Conclusions In the aluminum-induc
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A Preferential orientation calculat
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The area of the base of the pyramid
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B Abbreviations, symbols and units
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symbol unit meaning ∆G a eV activ
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Bibliography [1] M. Rogol, S. Doi,
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[20] R.W. Bower, R. Baron, J.W. May
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[38] J. Jang, J.Y. Oh, S.K. Kim, Y.
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[58] N.-P. Harder, T. Puzzer, P. Wi
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[72] G. Ekanayake, S. Summers, and
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[87] H.R. Philipp and E.A. Taft. An
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list of publications journal papers
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B. Rau, J. Klein, J. Schneider, E.
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(2002), 87. S. Gall, M. Muske, I. S
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tion. Special thank’s go to Dr. M
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10/95-09/98 student electrical engi
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