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$Math.-Nat. - Papier - Helmholtz-Zentrum Berlin$

10/95-09/98 student electrical engineering, (Vordiplom) 06/95 Abitur, 08/92-06/93 exchange student, Gerhard Mercator Universität Duisburg Albertus-Magnus-Gymnasium Ettlingen Meadowdale Highschool, Lynnwood, WA, USA
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Nucleation and growth during the fo
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"Our ignorance is not so vast as ou
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Zusammenfassung Dünne Schichten au
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• Temperatureprofile mit hoher En
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3.2 In-situ optical microscopy . .
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1 Introduction ’Solar power is ho
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por deposition (PECVD) achieved par
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phous silicon interface layer is ex
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2 State of the art This chapter giv
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2.1 Kinetics of phase change 9 Figu
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2.1 Kinetics of phase change 11 [e
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2.2 Solid Phase Crystallization (SP
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2.2 Solid Phase Crystallization (SP
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2.3 Metal-Induced Crystallization (
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2.4 Aluminum-Induced Layer Exchange
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2.5 Current research involving ALIL
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3 Experimental This thesis is focus
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3.1 Sample preparation 39 does not
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3.1 Sample preparation 41 � �
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3.2 In-situ optical microscopy 43 m
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3.2 In-situ optical microscopy 45 B
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3.3 Electron Back Scatter Diffracti
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4 Results In order to understand an
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4.1 Interlayer 51 (a) (b) Figure 4.
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4.1 Interlayer 53 Figure 4.2: TEM c
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4.1 Interlayer 55 c o u n ts [a .u
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4.1 Interlayer 57 R C [% ] 1 0 0 8
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4.1 Interlayer 59 � � ��
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4.1 Interlayer 61 � � ��
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4.1 Interlayer 63 -2 ] N G [m m 8 6
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4.1 Interlayer 65 TA = 450 °C TA =
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4.1 Interlayer 67 (111) (100) (110)
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4.1 Interlayer 69 4.1.2 Molybdenum
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4.1 Interlayer 71 Fig. 4.17 optical
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4.1 Interlayer 73 R C [% ] 1 0 0 8
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4.2 Temperature profiles 75 face la
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4.2 Temperature profiles 77 � �
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4.2 Temperature profiles 79 R C [%
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4.2 Temperature profiles 81 a small
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4.2 Temperature profiles 83 � �
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4.2 Temperature profiles 85 (a) (b)
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4.2 Temperature profiles 91 ��
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4.2 Temperature profiles 93 in. Thu
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4.2 Temperature profiles 95 ��
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5 Discussion Two of the most import
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5.1 Definition of three crucial Si
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Page 125 and 126: 5.2 The ALILE process in the phase
Page 127 and 128: 5.2 The ALILE process in the phase
Page 129 and 130: 5.3 Depletion regions in the ALILE
Page 131 and 132: 5.4 Comparison of the qualitative m
Page 137 and 138: 5.5 Preferential orientation model
Page 145 and 146: 6 Conclusions In the aluminum-induc
Page 147 and 148: A Preferential orientation calculat
Page 149 and 150: The area of the base of the pyramid
Page 151 and 152: B Abbreviations, symbols and units
Page 153 and 154: symbol unit meaning ∆G a eV activ
Page 155 and 156: Bibliography [1] M. Rogol, S. Doi,
Page 157 and 158: [20] R.W. Bower, R. Baron, J.W. May
Page 159 and 160: [38] J. Jang, J.Y. Oh, S.K. Kim, Y.
Page 161 and 162: [58] N.-P. Harder, T. Puzzer, P. Wi
Page 163 and 164: [72] G. Ekanayake, S. Summers, and
Page 165 and 166: [87] H.R. Philipp and E.A. Taft. An
Page 167 and 168: list of publications journal papers
Page 169 and 170: B. Rau, J. Klein, J. Schneider, E.
Page 171: (2002), 87. S. Gall, M. Muske, I. S
Page 174 and 175: tion. Special thank’s go to Dr. M
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