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78 Results R C [% ] 1 0 0 8 0 6 0 4 0 � � 2 0 0 �� H S 1 0 3 0 6 0 9 0 1 2 0 1 5 0 � �� Figure 4.22: Crystallized fraction RC vs. annealing time tA for experiment HS1. The left and the right curves (dashed lines) are isothermal anneals at 500 °C and 460 °C, respectively. The other samples where annealed at 460 °C until tS = 40 min, 60 min and 80 min and then heated to 500 °C. annealed at 500 °C. This leads to a strong reduction in process time compared to the reference curve annealed at 460 °C. In Fig. 4.23 the RC (tA) curves for experiment HS2 are shown. Again the same reference curves are included as dashed lines. Up to tA = 60 min the three RC curves follow the same dependence. At tA = 60 min RC varies only between 8.9 % and 12.9 % for the three samples. The slope of the RC curves clearly increases with increasing TS. The process time tP (RC = 95 %) is reduced by up to 45 min for the sample with the highest TS as compared to the reference sample annealed at 460 °C. The main objective of these experiments is the modification of the temperature profile in order to get large grains in short process times. In order to distinguish between the nucleation density at the heating step and the final nucleation density the indices S and F are introduced, respectively. The values have to be calculated differently because the layer exchange is not complete at the step time. Thus, not the entire image area is covered by Si but only the crystallized fraction. This has
4.2 Temperature profiles 79 R C [% ] 1 0 0 8 0 6 0 4 0 � � 2 0 0 �� H S 2 0 3 0 6 0 9 0 1 2 0 1 5 0 � �� Figure 4.23: Crystallized fraction RC vs. annealing time tA for experiment HS2. The left and the right curves (dashed lines) are isothermal anneals at 500 °C and 460 °C, respectively. (b) The step temperature TS has been varied from 10 °C, 20 °C, 30 °C to 40 °C at tS = 60 min. to be taken into account when calculating the grain size. To determine the nucleation density the number of objects in the micrographs is counted. The largest number of objects N0 within an image during the entire annealing together with the image area A0 determines the average final nucleation density NG,F = N0/A0. The average final grain area AG,F is inversely proportional to the final grain density NG,F , AG,F = 1/NG,F . The average final estimated grain size dG,F is the square root of the average final grain area AG,F (dG,F = AG,F 1/2 ). Hence, lower NG,F is desirable to increase the grain size. The nucleation density NG,S at the step time tS is calculated similar to NG,F , but using the number of objects N0,S at tS (NG,S = N0,S/A0). Calculating the average grain area AG,S at the step time tS it has to be taken into account that not the entire area is covered with silicon but only the crystallized fraction RC. Thus AG,S is inversely proportional to the nucleation density NG,S multiplied by the crystallized fraction RC,S at the step time tS (AG,S = RC,S · 1/NG,S). The average estimated grain size dG,S is the square root of the average grain area AG,S (dG,s = AG,S 1/2 ).
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Nucleation and growth during the fo
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"Our ignorance is not so vast as ou
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Zusammenfassung Dünne Schichten au
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• Temperatureprofile mit hoher En
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3.2 In-situ optical microscopy . .
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1 Introduction ’Solar power is ho
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por deposition (PECVD) achieved par
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phous silicon interface layer is ex
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2 State of the art This chapter giv
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2.1 Kinetics of phase change 9 Figu
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2.1 Kinetics of phase change 11 [e
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2.2 Solid Phase Crystallization (SP
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2.2 Solid Phase Crystallization (SP
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2.3 Metal-Induced Crystallization (
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2.4 Aluminum-Induced Layer Exchange
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2.4 Aluminum-Induced Layer Exchange
Page 43 and 44: 2.4 Aluminum-Induced Layer Exchange
Page 45 and 46: 2.5 Current research involving ALIL
Page 53 and 54: 3 Experimental This thesis is focus
Page 55 and 56: 3.1 Sample preparation 39 does not
Page 57 and 58: 3.1 Sample preparation 41 � �
Page 59 and 60: 3.2 In-situ optical microscopy 43 m
Page 61 and 62: 3.2 In-situ optical microscopy 45 B
Page 63 and 64: 3.3 Electron Back Scatter Diffracti
Page 65 and 66: 4 Results In order to understand an
Page 67 and 68: 4.1 Interlayer 51 (a) (b) Figure 4.
Page 69 and 70: 4.1 Interlayer 53 Figure 4.2: TEM c
Page 71 and 72: 4.1 Interlayer 55 c o u n ts [a .u
Page 73 and 74: 4.1 Interlayer 57 R C [% ] 1 0 0 8
Page 75 and 76: 4.1 Interlayer 59 � � ��
Page 77 and 78: 4.1 Interlayer 61 � � ��
Page 79 and 80: 4.1 Interlayer 63 -2 ] N G [m m 8 6
Page 81 and 82: 4.1 Interlayer 65 TA = 450 °C TA =
Page 83 and 84: 4.1 Interlayer 67 (111) (100) (110)
Page 85 and 86: 4.1 Interlayer 69 4.1.2 Molybdenum
Page 87 and 88: 4.1 Interlayer 71 Fig. 4.17 optical
Page 89 and 90: 4.1 Interlayer 73 R C [% ] 1 0 0 8
Page 91 and 92: 4.2 Temperature profiles 75 face la
Page 93: 4.2 Temperature profiles 77 � �
Page 97 and 98: 4.2 Temperature profiles 81 a small
Page 99 and 100: 4.2 Temperature profiles 83 � �
Page 101 and 102: 4.2 Temperature profiles 85 (a) (b)
Page 107 and 108: 4.2 Temperature profiles 91 ��
Page 109 and 110: 4.2 Temperature profiles 93 in. Thu
Page 111 and 112: 4.2 Temperature profiles 95 ��
Page 113 and 114: 5 Discussion Two of the most import
Page 115 and 116: 5.1 Definition of three crucial Si
Page 125 and 126: 5.2 The ALILE process in the phase
Page 127 and 128: 5.2 The ALILE process in the phase
Page 129 and 130: 5.3 Depletion regions in the ALILE
Page 131 and 132: 5.4 Comparison of the qualitative m
Page 137 and 138: 5.5 Preferential orientation model
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6 Conclusions In the aluminum-induc
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A Preferential orientation calculat
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The area of the base of the pyramid
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B Abbreviations, symbols and units
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symbol unit meaning ∆G a eV activ
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Bibliography [1] M. Rogol, S. Doi,
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[20] R.W. Bower, R. Baron, J.W. May
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[38] J. Jang, J.Y. Oh, S.K. Kim, Y.
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[58] N.-P. Harder, T. Puzzer, P. Wi
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[72] G. Ekanayake, S. Summers, and
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[87] H.R. Philipp and E.A. Taft. An
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list of publications journal papers
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B. Rau, J. Klein, J. Schneider, E.
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(2002), 87. S. Gall, M. Muske, I. S
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tion. Special thank’s go to Dr. M
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10/95-09/98 student electrical engi
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