Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...

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Vapor Pressures of Lanthanum Precursors => La(iPr 2 -fmd) 3 is most volatile La compound known, 60 mTorr at 100 o C Harvard University N H C N N HC N La N N CH La(iPrCp) 3 0.1 Torr
Precursors: H 2 O and Harvard University ALD of La 2 O 3 tris(N,N’-diisopropylformamidinato)lanthanum ( i Pr 2 -fmd) 3 La N H C N N HC N La N N CH => 0.16 nm per cycle => negligible delay in nucleation on SiH
Page 1 and 2: Atomic Layer Deposition (ALD): An E
Page 3 and 4: Chemical Vapor Deposition (CVD) One
Page 5 and 6: ML 2 H 2O Typical ALD Reaction for
Page 7 and 8: Lining and Filling Holes by ALD Har
Page 9 and 10: Coatings on the Outside of Particle
Page 11 and 12: ALD ruthenium on aluminum oxide dia
Page 13 and 14: Alumina Nanotubes on Carbon Nanotub
Page 15 and 16: Elements included in ALD Materials
Page 17 and 18: Pure Elements Made by ALD Green = A
Page 19 and 20: Harvard University Sulfides Made by
Page 21 and 22: Harvard University Fluorides Made b
Page 23 and 24: Definitions of Chemical Vapor Depos
Page 25 and 26: Criteria for CVD Precursors •Reac
Page 27 and 28: Definitions of Chemical Vapor Depos
Page 29 and 30: Increasing ligand bulk Structures o
Page 31 and 32: Increasing ligand bulk Structures o
Page 33 and 34: Zr(amd) 4 and Hf(amd) 4 Harvard Uni
Page 35: Harvard University Thermogravimetri
Page 39 and 40: Precursors: Me 3 Al, H 2 O and Harv
Page 41 and 42: 2 nm TEMs of ALD LaAlO 3 and GdScO
Page 43 and 44: Leakage (A/cm 2 ) 10 2 10 0 10 -2 1
Page 45: Harvard University Acknowledgements

Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...

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