Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...

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Precursor Reactivity with SiH Surface by IR La amidinate reacts with nearly all the Si-H bonds in only 3 cycles Hf alkylamide only reacts with half of the Si-H bonds on the surface even after many cycles => Completely uniform surface coverage by La amidinate Details of the infrared data were given at AVS Conference ALD 2007 by J. Kwon, M. Dai, E. Langereis, Y. Chabal, K.-H. Kim and R. G. Gordon. Harvard University
2 nm TEMs of ALD LaAlO 3 and GdScO 3 => Sharp interfaces with silicon without interlayers => Uniform nucleation and thickness Harvard University LaAlO 3 Si
Page 1 and 2: Atomic Layer Deposition (ALD): An E
Page 3 and 4: Chemical Vapor Deposition (CVD) One
Page 5 and 6: ML 2 H 2O Typical ALD Reaction for
Page 7 and 8: Lining and Filling Holes by ALD Har
Page 9 and 10: Coatings on the Outside of Particle
Page 11 and 12: ALD ruthenium on aluminum oxide dia
Page 13 and 14: Alumina Nanotubes on Carbon Nanotub
Page 15 and 16: Elements included in ALD Materials
Page 17 and 18: Pure Elements Made by ALD Green = A
Page 19 and 20: Harvard University Sulfides Made by
Page 21 and 22: Harvard University Fluorides Made b
Page 23 and 24: Definitions of Chemical Vapor Depos
Page 25 and 26: Criteria for CVD Precursors •Reac
Page 27 and 28: Definitions of Chemical Vapor Depos
Page 29 and 30: Increasing ligand bulk Structures o
Page 31 and 32: Increasing ligand bulk Structures o
Page 33 and 34: Zr(amd) 4 and Hf(amd) 4 Harvard Uni
Page 35 and 36: Harvard University Thermogravimetri
Page 37 and 38: Precursors: H 2 O and Harvard Unive
Page 39: Precursors: Me 3 Al, H 2 O and Harv
Page 43 and 44: Leakage (A/cm 2 ) 10 2 10 0 10 -2 1
Page 45: Harvard University Acknowledgements

Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...

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