Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...
Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...
Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...
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Precursors:<br />
Me 3 Al, H 2 O <strong>and</strong><br />
Harvard University<br />
Composition of <strong>ALD</strong> La xAl 1-xO 3/2<br />
tris(N,N’-diisopropyl<strong>for</strong>mamidinato)lanthanum<br />
( i Pr 2 -fmd) 3 La<br />
Growth conditions:<br />
Bubbler temperature 120 o C<br />
Substrate temperature 300 o C<br />
=> Composition control<br />
by changing ratio of<br />
precursor doses<br />
=> 2 x as many Al atoms<br />
as La atoms per dose<br />
N<br />
H<br />
C N<br />
N<br />
HC<br />
N<br />
La<br />
N<br />
N<br />
CH
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