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Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...

Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...

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Leakage (A/cm 2 )<br />

10 2<br />

10 0<br />

10 -2<br />

10 -4<br />

10 -6<br />

10 -8<br />

Harvard University<br />

Comparison of leakage<br />

SiO 2<br />

<strong>ALD</strong> LaAlO 3<br />

<strong>ALD</strong> GdScO 3<br />

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br />

EOT (nm, |V g -V fb |=1V)<br />

<strong>ALD</strong> LaScO 3<br />

<strong>ALD</strong> HfO 2 from IMEC (Ref.1)<br />

MOCVD HfO 2 from IMEC (Ref.2)<br />

<strong>ALD</strong> HfO 2 from IBM (Ref.3)<br />

Sputter HfO 2 (Ref.4)

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