Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...
Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...
Atomic Layer Deposition (ALD): An Enabler for Nanoscience and ...
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Precursors:<br />
H 2 O <strong>and</strong><br />
Harvard University<br />
<strong>ALD</strong> of La 2 O 3<br />
tris(N,N’-diisopropyl<strong>for</strong>mamidinato)lanthanum<br />
( i Pr 2 -fmd) 3 La<br />
N<br />
H<br />
C N<br />
N<br />
HC<br />
N<br />
La<br />
N<br />
N<br />
CH<br />
=> 0.16 nm per cycle<br />
=> negligible delay<br />
in nucleation on SiH
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