CHEM01200604009 Sreejith Kaniyankandy - Homi Bhabha ...

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CONTENTS Title Synopsis List of Figures List of Tables List of Schemes Abbreviations Page Number xiii-xx xxi-xxvi xxvii-xxviii xxix xxx-xxxi Chapter 1 Introduction 1.1. Nanotechnology Before 20 th Century 2-4 1.2. Physics of Semiconductors 1.2.1. Introduction 5-8 1.2.2. Effective Mass Approximation 8-9 1.2.3. Effect of 3-Dimensional Confinement on Electronic Structure 9-13 1.2.4. Confinement Effect in Real Band Structures 13-15 1.2.5. Dimensionality and Density of States (DOS) 15-17 1.3. Carrier Relaxation in Quantum Dots 17-18 1.3.1. Phonon mediated mechanism 18-19 1.3.2. Electron-Hole energy transfer mechanism 19 1.3.3. Multiparticle Auger Processes 19-20 1.3.4. Impact Ionization 20-21 vii
Page 1: Charge Transfer Dynamics in Quantum
Page 7: DECLARATION I, hereby declare that
Page 11: ACKNOWLEDGEMENTS It is my privilege
Page 15 and 16: 2.4.1. Introduction 51-53 2.4.2. In
Page 17 and 18: 4.3.1. Steady State Absorption Stud
Page 19 and 20: SYNOPSIS Energy based on nonrenewab
Page 21 and 22: CHAPTER 1: GENERAL INTRODUCTION Thi
Page 23 and 24: atio varied with size of samples. T
Page 25 and 26: elation behavior. These studies hav
Page 27 and 28: LIST OF FIGURES Figure Number Figur
Page 29 and 30: 2.12 Schematic diagram of autocorre
Page 31 and 32: 5.5 Time resolved emission decay tr
Page 33 and 34: LIST OF TABLES Table Number Table C
Page 35: LIST OF SCHEMES Scheme Number Schem
Page 38 and 39: NCs NPs NHE nm PD: Py QDs Qz SAED S
Page 41 and 42: 2 Chapter 1 Introduction 1.1. Nanot
Page 43 and 44: 4 size of the crystal is much large
Page 45 and 46: 6 It is clear from the figure that
Page 47 and 48: 8 ( x) u ( x) e k k ikx cos( kc)
Page 49 and 50: 10 In the previous sections the dis
Page 51 and 52: 12 correction factor in small nanoc
Page 53 and 54: 14 asymmetry. At k 0 spin orbit co
Page 55 and 56: 16 3 8 k (1.21) V It can be seen t
Page 57 and 58: 18 much larger than phonon energies
Page 59 and 60: 20 that such a process is involved
Page 61 and 62: 22 electricity. This forms the basi
Page 63 and 64:
24 1.5. “Improving on” QDs As m
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26 1.5.2. Semiconductor-Dye Nanostr
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28 known examples are oxidation of
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30 R P G λ ΔG * 2H RP ΔG Reactio
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32 a 1 and a 2 are radii of donor,
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34 In the above expression reactant
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36 distribution of injection rates.
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38 In the above equation Pr () is t
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40 Figure 1. 16. Nucleation and gro
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42 Additionally we also look for ho
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44 1.14 P. Harrison, Quantum Wells,
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46 1.46 H. Gerischer, Z. Phys. Chem
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48 Chapter 2 Experimental 2.1. Intr
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50 2.3. Fluorescence Spectroscopy F
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52 of crystal planes appear at diff
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54 different angles and intensities
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56 2.6. Transmission Electron Micro
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58 Electron Gun Condenser Lenses Sa
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60 The kinetic energy variation ari
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62 out in time domain. For example
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64 Light Source Excitation Monochro
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66 employed to retrieve lifetime va
Page 109 and 110:
68 ΔL Reference Pulse Δ t=2ΔL/c
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70 photodiodes for each pulse. Mech
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72 2. 8. 2. 2. Amplifier As mention
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74 multimodal and circular. The sec
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76 Figure 2.9. Optical layout of 2-
Page 119 and 120:
78 Here E is the electric field of
Page 121 and 122:
80 diagnostic. Additionally average
Page 123:
82 2.18. J. Manz, L. Wöste, Femtos
Page 127 and 128:
84 CHAPTER 3 Charge Carrier Dynamic
Page 129 and 130:
86 density of states. However, if o
Page 131 and 132:
88 3.3. Results & Discussion 3.3.1.
Page 133 and 134:
90 Absorbance (a.u) 1,0 d 2 1 c b a
Page 135 and 136:
92 The spectrum has been shown in t
Page 137 and 138:
94 injection dynamics where the con
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96 dye gave a pulse width limited i
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98 alizarin has extended -electron
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100 n=5 n=4 n=3 n=2 n=1 n=0 trappin
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102 energy change is the only facto
Page 147 and 148:
104 2. Nazeeruddin, M. K.; Kay, A.;
Page 149:
106 32. Duncan, W. R; Prezhdo, O. V
Page 153 and 154:
108 CHAPTER 4 Effect of Size Quanti
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110 impossible in bulk systems. For
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112 4.3. Results & Discussion: 4.3.
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114 nm which exactly matched with t
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116 of 3.2ps (~90%) which can be at
Page 163 and 164:
118 Figure 3: Panel A: Normalized k
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120 dynamics of hot electron. The p
Page 167 and 168:
122 constants of τ 1 = 7ps (53%),
Page 169 and 170:
124 4.4 Conclusion In conclusion we
Page 171:
126 4.15. Ekimov, A. I.; Hache, F.;
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128 CHAPTER 5 Charge Carrier Dynami
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130 CdSe/ZnTe. Feldman and coworker
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132 by reducing Se with NaBH 4 with
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134 broadening in the present case
Page 183 and 184:
136 vis absorption spectra of the t
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138 5.3.3. Time resolved emission s
Page 187 and 188:
140 Sample t 1 (ns) t 2 (ns) t 3 (n
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142 can be attributed to absorption
Page 191 and 192:
144 5.3.5. Transient absorption stu
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146 However, due to staggered band
Page 195 and 196:
148 Scheme 5.1: Schematic represent
Page 197 and 198:
150 are the reason for that contrib
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152 5.10. L. P. Balet, S. A. Ivanov
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154 Chapter 6
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156 Recently several methods like c
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158 6.2.2. Reduction of Graphene Ox
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160 isolated CdTe QD over graphene
Page 210 and 211:
162 Figure 6.3: Time-resolved emiss
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164 carriers on laser excitation. I
Page 214 and 215:
166 absorption in the present studi
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168 increases from 33.3% to 61.8% i
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170 as compared to that of GO. It i
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172 components could come from trap
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174 A (m O.D.) 0 -10 -20 -30 a b Cd
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176 The cooling dynamics does not s
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178 The study clearly shows that th
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180 From emission studies both stea
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182 6.18. C. X. Guo, H. Bin Yang, Z
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184 CHAPTER 7 Summary and Outlook 7
Page 235 and 236:
186 bleach growth times from 500fs
Page 237 and 238:
188 Study of interfacial electron t
Page 239:
190 Chapter 8 List of Publications
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