CHEM01200604009 Sreejith Kaniyankandy - Homi Bhabha ...

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6.5 Transient decay kinetics of graphene oxide (GO) at 670 164 nm after exciting at 400 nm laser pulse. Inset: Absorbance change (Δ O. D.) graphene oxide (GO) at 670 nm at different excitation energy density (pump intensity) 6.6 Figure 6.6: Transient decay kinetics of graphene oxide 167 (GO) at 670 nm after exciting at 400 nm laser pulse in absence of any quencher (GO), in presence of electron quencher (GO-BQ) and in presence of hole quencher (GO- PY) 6.7 Transient absorption spectra of reduced (24 hours) 170 graphene oxide (RGO-2) at different time delay after exciting 400 nm laser pulse. Inset: Transient decay kinetics at 670 nm. 6.8 Femtosecond Transient absorption spectrum at different 173 time delays for CdTe (a) and G-CdTe (b) after excitation at λ pump =400nm. 6.9 Bleach recovery kinetics at 460 nm for a) CdTe and b) G- 174 CdTe after 400 nm laser excitation. xxvi
LIST OF TABLES Table Number Table Caption Page Number 3.1 Parameters for the multi-exponential Fits to the electron 94 injection and back electron transfer (BET) kinetics of alizarin sensitized B-TiO 2 after monitoring both alizarin cation at 550 nm and electron in the conduction band at 900 nm. 5.1 Fits for emission decay traces for core and core shell 140 samples 5.2 Fit for kinetic traces of a) CdSe at 460 nm, b) 147 CdSe/ZnTe3 at 480 nm, and c) CdSe/ZnTe4 at 520 nm after excitation at 400 nm laser light. 6.1 Life times of the transient absorption signal of graphene 168 oxide at 670 nm after exciting at 400 nm laser light in absence of any quencher (GO), in presence of electron quencher (GO-BQ) and in presence of hole quencher (GO-PY). 6.2 Lifetimes of the transient absorption signal of graphene 171 oxide (GO), reduced (1 hour) graphene oxide (RGO-1) and reduced (for 24 hours) graphene oxide (RGO-2) and xxvii
Page 1: Charge Transfer Dynamics in Quantum
Page 7: DECLARATION I, hereby declare that
Page 11: ACKNOWLEDGEMENTS It is my privilege
Page 14 and 15: 1.3.5. Defect Mediated Relaxation 2
Page 16 and 17: 2. 8. 4. White Light Generation- 45
Page 18 and 19: 6.2. Experimental 6.2.1.Synthesis o
Page 20 and 21: devices based on QDs it has been sh
Page 22 and 23: Furthermore generation of pump (~40
Page 24 and 25: shell). This clearly indicated that
Page 26 and 27: 12. V. I. Klimov, J. Phys. Chem. B,
Page 28 and 29: 1.13 Reactant and Product Potential
Page 30 and 31: light. Inset: Kinetic traces monito
Page 34 and 35: at 670 nm after exciting at 400 nm
Page 37 and 38: ABBREVIATIONS BET BQ CB CCD CdS CdT
Page 39: 1 Chapter 1
Page 42 and 43: 3 size dependent optical properties
Page 44 and 45: 5 1.2. Physics of Semiconductors 1.
Page 46 and 47: 7 As seen from the schematic, poten
Page 48 and 49: 9 Substituting this in Schrödinger
Page 50 and 51: 11 ( r, r ) ( r ) ( r ) (1.13) e
Page 52 and 53: 13 E E E 2 2 2 EX ne, le nh,
Page 54 and 55: 15 spherical symmetry of field. The
Page 56 and 57: 17 gE ( ) 2Em 2 3 3 (1.25) For a
Page 58 and 59: 19 1.3.2. Electron-Hole energy tran
Page 60 and 61: 21 Impact Ionization Figure 1.7. Sc
Page 62 and 63: 23 understanding on mechanistic asp
Page 64 and 65: 25 carriers are unable to sample th
Page 66 and 67: 27 CB VB QD Metal Figure. 1. 10. Sc
Page 68 and 69: 29 energy barrier. Therefore it is
Page 70 and 71: 31 1 f q 2 A qB (1.30) 2 In equa
Page 72 and 73: 33 Vibrational contribution can be
Page 74 and 75: 35 1. 7. 1. Electron Injection ET i
Page 76 and 77: 37 Under assumption of invariance o
Page 78 and 79: 39 distribution. To achieve good si
Page 80 and 81: 41 initially achieved monodispersit
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43 and rate of charge transfer acro
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45 1.32 P. V. Kamat, J. Phys. Chem.
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47 Chapter 2
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49 chemical species. Since a partic
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51 fluorescence forms an important
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53 eliminated by use of standard wh
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55 sample. Raman spectroscopy is ba
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57 will appear bright and region wi
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59 volatile solvent is drop casted
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61 spots arise from diffraction fro
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63 The electrical signal is then ch
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65 delayed and inverted. The two si
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67 Pump-probe technique is one of t
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69 Amplifier Jade Stretcher fs Osci
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71 Figure 2.6. Optical layout of Ti
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73 Grating Convex Mirror Concave Mi
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75 changes the polarization from ho
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77 Grating Output Input Mirror Grat
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79 μJ has a very high peak power.
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81 2.6. Dynamical Theory of X-Ray D
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83 Chapter 3
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85 Therefore the study of interfaci
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87 3. 2. Experimental Section 3.2.1
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89 and intensity show absence of ot
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91 which is also neutral; therefore
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93 electron transfer times. This re
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95 r B a * 0 3.1 me / me Now the
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97 nonadiabatic case the electron t
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99 drastically reduced leading to a
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101 While the study of injection dy
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103 study. Based on the injection d
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105 17. L. E. Brus, J. Phys. Chem.
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107 Chapter 4
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109 of the QDs. As a result surface
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111 4.2.2. Synthesis: The CdTe QDs
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113 lower hole state. In CdSe the l
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115 4.2 inset. The kinetic traces a
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117 growth of the bleach kinetics (
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119 previous section we have discus
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121 lived charge transfer complex w
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123 100 times concentration of the
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125 4.5. References 4.1. Efros, Al.
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127 Chapter 5
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129 been made in the synthesis of t
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131 metallic synthesis by arrested
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133 5.3. Result and discussion: 5.3
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135 indicating a confinement induce
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137 absorption studies that on form
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139 1000 c b PL Intensity 100 10 a
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141 samples due to a very weak exci
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143 dynamical spectrum is negligibl
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145 Earlier authors [5.4] reported
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147 Sample t r(ps) t 1(ps) t 2(ps)
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149 In addition to the cooling dyna
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151 pulse-width time scale followed
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153 5.20. Sreejith Kaniyankandy, Sa
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155 CHAPTER 6 Charge Separation in
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157 Studies by Wang et. al. [6.15]
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159 graphene in a 1M NaOH solution.
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161 Intensity (a.u.) 5 4 3 2 1 CdTe
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163 dynamics of graphene oxide and
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165 GO as shown in the Figure 3 rev
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167 electron acceptor for Graphene.
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169 governs the recombination dynam
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171 Sample τ 1 (ps) τ 2 (ps) τ 3
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173 A (mO.D) 10.0 0.0 -10.0 -20.0 0
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175 involved in the relaxation may
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177 Electron quencher (benzoquinone
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179 Scheme 6.1. Schematic of Electr
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181 6.6. Reina, A.; Jia, X.; Ho, J.
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183 6.26. Kaiser, A. B.; Navarro, C
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185 assigned to injection into diff
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187 transfer from CdSe core to ZnTe
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189 However the position of bands i
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