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Charge Transfer Dynamics in Quantum
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DECLARATION I, hereby declare that
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ACKNOWLEDGEMENTS It is my privilege
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1.3.5. Defect Mediated Relaxation 2
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2. 8. 4. White Light Generation- 45
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6.2. Experimental 6.2.1.Synthesis o
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devices based on QDs it has been sh
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Furthermore generation of pump (~40
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shell). This clearly indicated that
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12. V. I. Klimov, J. Phys. Chem. B,
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1.13 Reactant and Product Potential
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light. Inset: Kinetic traces monito
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6.5 Transient decay kinetics of gra
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at 670 nm after exciting at 400 nm
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ABBREVIATIONS BET BQ CB CCD CdS CdT
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1 Chapter 1
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3 size dependent optical properties
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5 1.2. Physics of Semiconductors 1.
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7 As seen from the schematic, poten
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9 Substituting this in Schrödinger
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11 ( r, r ) ( r ) ( r ) (1.13) e
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13 E E E 2 2 2 EX ne, le nh,
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15 spherical symmetry of field. The
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17 gE ( ) 2Em 2 3 3 (1.25) For a
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19 1.3.2. Electron-Hole energy tran
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21 Impact Ionization Figure 1.7. Sc
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23 understanding on mechanistic asp
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25 carriers are unable to sample th
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27 CB VB QD Metal Figure. 1. 10. Sc
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29 energy barrier. Therefore it is
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31 1 f q 2 A qB (1.30) 2 In equa
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33 Vibrational contribution can be
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35 1. 7. 1. Electron Injection ET i
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37 Under assumption of invariance o
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39 distribution. To achieve good si
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41 initially achieved monodispersit
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43 and rate of charge transfer acro
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45 1.32 P. V. Kamat, J. Phys. Chem.
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47 Chapter 2
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49 chemical species. Since a partic
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51 fluorescence forms an important
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53 eliminated by use of standard wh
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55 sample. Raman spectroscopy is ba
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57 will appear bright and region wi
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59 volatile solvent is drop casted
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61 spots arise from diffraction fro
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63 The electrical signal is then ch
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65 delayed and inverted. The two si
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67 Pump-probe technique is one of t
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69 Amplifier Jade Stretcher fs Osci
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71 Figure 2.6. Optical layout of Ti
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73 Grating Convex Mirror Concave Mi
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75 changes the polarization from ho
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77 Grating Output Input Mirror Grat
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79 μJ has a very high peak power.
- Page 122 and 123: 81 2.6. Dynamical Theory of X-Ray D
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- Page 128 and 129: 85 Therefore the study of interfaci
- Page 130 and 131: 87 3. 2. Experimental Section 3.2.1
- Page 132 and 133: 89 and intensity show absence of ot
- Page 134 and 135: 91 which is also neutral; therefore
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- Page 144 and 145: 101 While the study of injection dy
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- Page 148 and 149: 105 17. L. E. Brus, J. Phys. Chem.
- Page 151: 107 Chapter 4
- Page 154 and 155: 109 of the QDs. As a result surface
- Page 156 and 157: 111 4.2.2. Synthesis: The CdTe QDs
- Page 158 and 159: 113 lower hole state. In CdSe the l
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- Page 162 and 163: 117 growth of the bleach kinetics (
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- Page 170 and 171: 125 4.5. References 4.1. Efros, Al.
- Page 175 and 176: 128 CHAPTER 5 Charge Carrier Dynami
- Page 177 and 178: 130 CdSe/ZnTe. Feldman and coworker
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- Page 187 and 188: 140 Sample t 1 (ns) t 2 (ns) t 3 (n
- Page 189 and 190: 142 can be attributed to absorption
- Page 191 and 192: 144 5.3.5. Transient absorption stu
- Page 193 and 194: 146 However, due to staggered band
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- Page 199 and 200: 152 5.10. L. P. Balet, S. A. Ivanov
- Page 201: 154 Chapter 6
- Page 204 and 205: 156 Recently several methods like c
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- Page 218 and 219: 170 as compared to that of GO. It i
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174 A (m O.D.) 0 -10 -20 -30 a b Cd
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176 The cooling dynamics does not s
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178 The study clearly shows that th
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180 From emission studies both stea
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182 6.18. C. X. Guo, H. Bin Yang, Z
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184 CHAPTER 7 Summary and Outlook 7
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186 bleach growth times from 500fs
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188 Study of interfacial electron t
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190 Chapter 8 List of Publications