CHEM01200604009 Sreejith Kaniyankandy - Homi Bhabha ...

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125 4.5. References 4.1. Efros, Al. L., Efros, A. Sov. Phys. Sem. 1982, 16, 772 4.2. Klimov, V. I. J. Phys. Chem. B. 2006, 110, 16827. 4.3. Murray, C.; Norris, D.; Bawendi, M., J. Am. Chem. Soc., 115 (1993) 8706. 4.4. Shah, J. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures; Springer: New York, 1999. 4.5. Helm, U.; Wiesner, P. Phys. ReV. Lett. 1973, 30, 1205. 4.6. Sionnest, P, G.; Shim, M.; Matranga, C.; Hines, M.; Phys. Rev. B. 1999, 60, 2181. 4.7. Pandey, A.; Sionnest, P. G.; Science 2008, 322, 929. 4.8. Cooney, R. R.; Sewail, S. L.; Anderson, K. E. H.; Dias, E. A.; Kambhampati, P. Phys. Rev. Lett. 2007, 98, 177403. 4.9. Nanda. J.; Ivanov, S. A.; Achermann, M.; Bezel, I.; Piryatinski, A.; and Victor I. Klimov. J. Phys. Chem. C. 2007, 111, 15382. 4.10. Mikel, S.; Miguel, A. C-D.; Marzan, L. M.- L ; and Abderrazzak, D. J. Photochem. Photobiology. A. 2008, 196, 51. 4.11. Fragnito, J. L.; Rios, J. M. M.; Duarte, A. S.; Palange, E.; Neto, J. A. M.; Cesar, C. L.; Barbosa, L. C.; Alves, O. L.; and Cruz, G. H. B. J. Phys. Cond. Mater. 1993, A179-A180, 5. 4.12. Ma, S. M-.; Seo, J. T.; Yu, W.; Yang, O.; Tabibi, B.;Temple, D.; Min, N.; Jung, S. S.; and Kim, W. J. J. Phys. 2008, 109, 012025. 4.13. Gaponik, N., Talapin D. V.; Rogach, A. L.; Hoppe, K.; Shevchenko, E. V.; Kornowski, A, Eychm¨uller, A and Weller, H. J. Phys. Chem. B. 2002, 106, 7177. 4.14. Yu, W. W.; Qu, L.; Guo, W.; and Peng, X. Chem. Mater.2003, 15, 2854.
126 4.15. Ekimov, A. I.; Hache, F.; Klein, M. C. S-.; Ricard, D.; Flytzanis, C.; Kudryavtsev, I. A.; Yazeva, T. V.; Rodina, A. V.; and A. L. Efros, J. Opt. Soc. Am. B. 1993, 10, 100. 4.16. Esch, V.; Fluegel, B.; Khitrova, G.; Gibbs, H. M.; Jiajin, X.; Kang, K.; Koch, S. W.; Liu, L. C.; Risbud, S. H.; and Peyghambarian, N. Phys. Rev. 1990, 42, 7450. 4.17. Burda, C.; Green, T. C.; Link, S.; El-Sayed, M. A. J. Phys. Chem.B 1999, 103, 1783 4.18. Landes, C.; Burda, C.; Braun, M.; and El-Sayed, M. A. J. Phys. Chem. B, 2001, 105, 2981. 4.19. Klimov, V. I.; Schwarz, Ch. J.; McBranch, D. W.; Leatherdale, C.A.; Bawendi, M. G. Phys. Rev. B 1999, 60, R2177. 4.20. Guyot-Sionnest, P.; Hines, M. A. Appl. Phys. Lett. 1998, 72, 686.
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Charge Transfer Dynamics in Quantum
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DECLARATION I, hereby declare that
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ACKNOWLEDGEMENTS It is my privilege
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1.3.5. Defect Mediated Relaxation 2
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2. 8. 4. White Light Generation- 45
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6.2. Experimental 6.2.1.Synthesis o
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devices based on QDs it has been sh
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Furthermore generation of pump (~40
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shell). This clearly indicated that
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12. V. I. Klimov, J. Phys. Chem. B,
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1.13 Reactant and Product Potential
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light. Inset: Kinetic traces monito
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6.5 Transient decay kinetics of gra
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at 670 nm after exciting at 400 nm
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ABBREVIATIONS BET BQ CB CCD CdS CdT
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1 Chapter 1
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3 size dependent optical properties
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5 1.2. Physics of Semiconductors 1.
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7 As seen from the schematic, poten
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9 Substituting this in Schrödinger
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11 ( r, r ) ( r ) ( r ) (1.13) e
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13 E E E 2 2 2 EX ne, le nh,
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15 spherical symmetry of field. The
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17 gE ( ) 2Em 2 3 3 (1.25) For a
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19 1.3.2. Electron-Hole energy tran
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21 Impact Ionization Figure 1.7. Sc
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23 understanding on mechanistic asp
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25 carriers are unable to sample th
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27 CB VB QD Metal Figure. 1. 10. Sc
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29 energy barrier. Therefore it is
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31 1 f q 2 A qB (1.30) 2 In equa
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33 Vibrational contribution can be
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35 1. 7. 1. Electron Injection ET i
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37 Under assumption of invariance o
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39 distribution. To achieve good si
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41 initially achieved monodispersit
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43 and rate of charge transfer acro
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45 1.32 P. V. Kamat, J. Phys. Chem.
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47 Chapter 2
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49 chemical species. Since a partic
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51 fluorescence forms an important
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53 eliminated by use of standard wh
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55 sample. Raman spectroscopy is ba
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57 will appear bright and region wi
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59 volatile solvent is drop casted
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61 spots arise from diffraction fro
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63 The electrical signal is then ch
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65 delayed and inverted. The two si
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67 Pump-probe technique is one of t
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69 Amplifier Jade Stretcher fs Osci
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71 Figure 2.6. Optical layout of Ti
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73 Grating Convex Mirror Concave Mi
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75 changes the polarization from ho
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77 Grating Output Input Mirror Grat
Page 120 and 121: 79 μJ has a very high peak power.
Page 122 and 123: 81 2.6. Dynamical Theory of X-Ray D
Page 125: 83 Chapter 3
Page 128 and 129: 85 Therefore the study of interfaci
Page 130 and 131: 87 3. 2. Experimental Section 3.2.1
Page 132 and 133: 89 and intensity show absence of ot
Page 134 and 135: 91 which is also neutral; therefore
Page 136 and 137: 93 electron transfer times. This re
Page 138 and 139: 95 r B a * 0 3.1 me / me Now the
Page 140 and 141: 97 nonadiabatic case the electron t
Page 142 and 143: 99 drastically reduced leading to a
Page 144 and 145: 101 While the study of injection dy
Page 146 and 147: 103 study. Based on the injection d
Page 148 and 149: 105 17. L. E. Brus, J. Phys. Chem.
Page 154 and 155: 109 of the QDs. As a result surface
Page 156 and 157: 111 4.2.2. Synthesis: The CdTe QDs
Page 158 and 159: 113 lower hole state. In CdSe the l
Page 160 and 161: 115 4.2 inset. The kinetic traces a
Page 162 and 163: 117 growth of the bleach kinetics (
Page 164 and 165: 119 previous section we have discus
Page 166 and 167: 121 lived charge transfer complex w
Page 168 and 169: 123 100 times concentration of the
Page 176 and 177: 129 been made in the synthesis of t
Page 178 and 179: 131 metallic synthesis by arrested
Page 180 and 181: 133 5.3. Result and discussion: 5.3
Page 182 and 183: 135 indicating a confinement induce
Page 184 and 185: 137 absorption studies that on form
Page 186 and 187: 139 1000 c b PL Intensity 100 10 a
Page 188 and 189: 141 samples due to a very weak exci
Page 190 and 191: 143 dynamical spectrum is negligibl
Page 192 and 193: 145 Earlier authors [5.4] reported
Page 194 and 195: 147 Sample t r(ps) t 1(ps) t 2(ps)
Page 196 and 197: 149 In addition to the cooling dyna
Page 198 and 199: 151 pulse-width time scale followed
Page 200 and 201: 153 5.20. Sreejith Kaniyankandy, Sa
Page 203 and 204: 155 CHAPTER 6 Charge Separation in
Page 205 and 206: 157 Studies by Wang et. al. [6.15]
Page 207 and 208: 159 graphene in a 1M NaOH solution.
Page 209 and 210: 161 Intensity (a.u.) 5 4 3 2 1 CdTe
Page 211 and 212: 163 dynamics of graphene oxide and
Page 213 and 214: 165 GO as shown in the Figure 3 rev
Page 215 and 216: 167 electron acceptor for Graphene.
Page 217 and 218: 169 governs the recombination dynam
Page 219 and 220: 171 Sample τ 1 (ps) τ 2 (ps) τ 3
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173 A (mO.D) 10.0 0.0 -10.0 -20.0 0
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175 involved in the relaxation may
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177 Electron quencher (benzoquinone
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179 Scheme 6.1. Schematic of Electr
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181 6.6. Reina, A.; Jia, X.; Ho, J.
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183 6.26. Kaiser, A. B.; Navarro, C
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185 assigned to injection into diff
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187 transfer from CdSe core to ZnTe
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189 However the position of bands i
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