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CHEM01200604009 Sreejith Kaniyankandy - Homi Bhabha ...

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17<br />

gE ( ) <br />

2Em<br />

2 3<br />

<br />

3<br />

(1.25)<br />

For a Quantum Well where in two dimensions particles are free, we can write DOS as<br />

m<br />

g2D( E)<br />

(1.26)<br />

2<br />

<br />

For Quantum Wire DOS is,<br />

( ) 1 2m<br />

g1D E (1.27)<br />

E<br />

For Quantum Dots levels are fully discrete.<br />

Below schematic in fig 1.4 gives DOS versus E for different dimensionality.<br />

1.3. Carrier Relaxation in Quantum Dots<br />

In the previous section, discussion was mainly concentrated on the effects of<br />

quantization on electronic properties. These changes in electronic properties not only affect<br />

steady state properties but also affect dynamics properties. Several studies have shown how<br />

relaxation dynamics in quantum dots are unique. Understanding the relaxation mechanisms<br />

helps in achieving a degree of control over properties which in turn helps in optimizing<br />

performance of devices constructed from quantum dots.<br />

On photoexcitation with<br />

h E (Band Gap) of the semiconductor, electrons and<br />

g<br />

holes are produced in Conduction and Valence Band respectively. In bulk semiconductors<br />

energy spacing within individual bands are smaller than thermal energy therefore cooling<br />

(relaxation in individual bands or intraband transitions) can happen via a phonon emission<br />

processes. In a quantum confined system the spacing in the individual bands are very often

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