- Page 1: Nucleation and growth during the fo
- Page 7: Abstract Polycrystalline Silicon (p
- Page 10 and 11: iv wurde die Temperatur während de
- Page 13 and 14: Contents Abstract i Zusammenfassung
- Page 15: List of publications 151 Acknowledg
- Page 18 and 19: 2 Introduction number of devices pe
- Page 20 and 21: 4 Introduction Figure 1.1: Schemati
- Page 22 and 23: 6 Introduction an outlook on future
- Page 24 and 25: 8 State of the art p, c p, c 1 1 II
- Page 26 and 27: 10 State of the art the metastable,
- Page 28 and 29: 12 State of the art The model assum
- Page 30 and 31: 14 State of the art the substrate o
- Page 32 and 33: 16 State of the art Figure 2.6: Ske
- Page 34 and 35: 18 State of the art Combining this
- Page 36 and 37: 20 State of the art Figure 2.9: Hay
- Page 38 and 39: 22 State of the art level acceptor
- Page 40 and 41: 24 State of the art Many years late
- Page 42 and 43: 26 State of the art Figure 2.13: AL
- Page 44 and 45: 28 State of the art c-Si Al a-Si (a
- Page 46 and 47: 30 State of the art Figure 2.17: Si
- Page 48 and 49: 32 State of the art IMEC has achiev
- Page 50 and 51: 34 State of the art Figure 2.19: TE
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36 State of the art �����
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38 Experimental 3.1.1 Substrates Co
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40 Experimental cooled. A large tem
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42 Experimental ������
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44 Experimental camera OM HS live m
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46 Experimental -2 ] N G [1 0 0 0 m
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48 Experimental
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50 Results 4.1 Interlayer It was sh
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52 Results between the c-Si seed la
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54 Results To investigate the influ
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56 Results (a) (b) 100 µm 100 µm
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58 Results � � �����
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60 Results � � �����
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62 Results � � �����
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64 Results tial (100) orientation [
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66 Results annealed at TA = 450 °C
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68 Results R (1 0 0 ) [% ] 1 0 0 8
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70 Results c o u n ts [a .u .] 1 .0
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72 Results (a) (b) (c) 100 µm 100
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74 Results Figure 4.20: SEM image o
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76 Results 4.2.1 Heating step In is
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78 Results R C [% ] 1 0 0 8 0 6 0 4
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80 Results -2 ] N G ,F [1 0 3 m m 8
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82 Results Figure 4.25: Additional
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84 Results ing step are shown in Fi
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86 Results distributed. It is impor
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88 Results T A T 1 T 2 P 1 P 2 P 3
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90 Results Figure 4.32: Evaluation
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92 Results -2 ] ρ N [1 0 3 m m -2
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94 Results to about 30 µm. The dep
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96 Results of the specimen. Zones a
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98 Discussion In section 5.1 three
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100 Discussion characteristic eutec
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102 Discussion below the saturation
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104 Discussion in the grain. As a r
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106 Discussion where ω is a factor
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108 Discussion III: C ∗ ≤ C < C
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110 Discussion concentration close
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112 Discussion These three periods
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114 Discussion nuclei around preexi
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116 Discussion n o rm a liz e d v a
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118 Discussion This means that the
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120 Discussion 5.5 Preferential ori
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122 Discussion (a) (b) Figure 5.10:
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124 Discussion lations see Appendix
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126 Discussion Δ G * [e V ] 2 0 1
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128 Discussion
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130 Conclusions The results present
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132 Preferential orientation calcul
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134 Preferential orientation calcul
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136 Abbreviations, symbols and unit
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138 Abbreviations, symbols and unit
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[9] O. Nast, T. Puzzer, L. M. Kosch
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[29] J.O. McCaldin and H. Sankur. D
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[49] G. Majni and G. Ottaviani. Sol
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polycrystalline seed layers by elec
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[79] P. Stradins, D.L. Young, H. M.
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[96] Al-si (aluminium - silicon). I
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F. Brunner, A. Braun, P. Kurpas, J.
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induced crystallisation of amorphou
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Acknowledgement I want to thank Pro
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curriculum vitae: Jens Schneider, b