Search options available in STN databases - FIZ Karlsruhe

32 Family search example
32.1 Example 1
256
Guide to STN Patent Databases
For the US patent numbered 6,300,146 equivalent applications in other countries or additional US patents are
sought.
32.1.1 Search in INPAFAMDB
=> FIL INPAFAMDB
FILE 'INPAFAMDB' ENTERED
COPYRIGHT (C) 2008 European Patent Office / FIZ Karlsruhe
=> S US 6300146/PN
L1 1 US 6300146 /PN
(US6300146/PN)
=> D
BRIEF is the default format. This format provides a good
overview of the whole patent family.
L1 ANSWER 1 OF 1 INPAFAMDB COPYRIGHT 2008 EPO/FIZ KA on STN
AN 15190523 INPAFAMDB
TI Halbleiterbauteil sowie Verfahren zur Messung seiner Temperatur.
- HYBRID PACKAGE INCLUDING POWER MOSFET DIE AND CONTROL AND PROTECTION
CIRCUIT DIE WITH SMALLER SENSE MOSFET.
- Hybrid package including a power MOSFET die and a control and protection
circuit die with a smaller sense MOSFET.
- Ionizing bar and method of its fabrication.
INS THIERRY VINCENT, FR
- THIERRY VINCENT
PAS INT RECTIFIER CORP, US
- INT RECTIFIER CORP
IPCR H01L0023-34 [I,A ]; H03K0017-08 [N,A ]; H03K0017-082 [I,A ];
H01L0023-34 [I,C*]; H03K0017-08 [N,C*]; H03K0017-082 [I,C*]
EPC H03K0017-082B
AB (US 6137165 A)
A power MOSFET die and a logic and protection circuit die are mounted on
a common lead frame pad, such as a TO220 lead frame pad. The logic and
protection circuit die includes a MOSFET that is connected in parallel
with the power MOSFET but which is smaller than the power MOSFET and
which dissipates power at a predetermined fraction of that of the power
MOSFET. The logic and protection circuit die also includes a temperature
sensor that is in close proximity to the MOSFET and determines the
temperature of the MOSFET. The die also includes another temperature
sensor that is located distant from the MOSFET to determine the
temperature of the lead frame. The temperature of the power MOSFET can be
determined from the temperature measured by these two sensors and from
the ratio of the power dissipated by the two MOSFETs.
PATENT FAMILY INFORMATION INPAFAMDB
+-------- PUBLICATIONS --------+ +-------- APPLICATIONS --------+
DE 10031115 A1 20010125 DE 2000-10031115 A 20000626
JP 2001015655 A 20010119 JP 2000-189210 A 20000623
US 6137165 A 20001024 US 1999-344704 A 19990625
US 6300146 B1 20011009 US 2000-549280 A 20000414
+--------- PRIORITIES ---------+
US 1999-344704 A 19990625
US 2000-549280 A 20000414
32.1.2 Search in INPADOCDB
=> FIL INPADOCDB