CHEM02200704003 Nilamadhab Pandhy - Homi Bhabha National ...

Chapter 3
necessary condition is that the 0 and h should be less then critical angle c for total external
reflection.
In the present investigation GIXRD analysis was carried out by STOE make diffractometer
to study the structural modification occurring on 304L SS with increasing dose of nitrogen ion
implantation, and for the phase analysis, and particle size determination of the sputter deposited
titanium (Ti) and titanium dioxide (TiO 2 ) and duplex Ti-TiO 2 coating on 304L SS. To study the
structural modification as well as formation of certain phases with increase in nitrogen ion
implantation dose, specimens from unimplanted and nitrogen ion implanted 304L SS with dose of
1×10 16 , 1×10 17 and 2.5×10 17 N + /cm 2 were analyzed. All the measurements were carried out at
glancing angle of 1° for Cu K ( = 1.5487 Å) with rotation of the sample at a measuring rate of
1° per sec in the 2 range from 30°-90°. The angle of incidence was kept 1° because the depth of
nitrogen ion implanted layer as calculated by TRIM simulation code [57] was 76 nm with
straggling of 33 nm, and at this angle of incidence information about the phase components can be
obtained up to a depth of 110 nm. Similarly, GIXRD analysis of titanium (Ti), titanium dioxide
(TiO 2 ) and duplex Ti-TiO 2 coated specimen were carried out in the 2 range from 20°-80° to
analyze the phase composition as well as to determine the particle size using Scherrer’s formula.
The data obtained were analyzed using JCPDS data base as well as compared with available
literature.
3.1.4.2 Secondary Ion Mass Spectroscopy
Secondary Ion Mass Spectroscopy (SIMS) is one of the versatile analytical techniques to
obtain chemical composition information at the surface, sub-surface, and in the bulk of the
specimen. In general SIMS can characterize specimens with high spatial, and in-depth resolution,
due to inherent sensitivity of mass spectroscopy coupled with high detection sensitivity down to
ppb levels. Some of the interesting applications of SIMS include, (a) concentration profiles of