CHEM02200704003 Nilamadhab Pandhy - Homi Bhabha National ...

Chapter 3
Y m is the sputter yield.
is the ionization probability.
m is the fractional concentration of m in the surface layer.
is the transmission of the analysis system.
Fig. 3.6: Schematic of Secondary Ion Mass Spectroscopy [84].
In the present investigation, elemental depth profile analysis of unimplanted, and nitrogen
ion implanted 304L SS with dose of 2.5×10 17 N + /cm 2 was carried out using dynamic SIMS
(Cameca IMS 4f). All the measurements were carried out in positive SIMS mode using Cs + as
primary ion source. The relative elemental sensitivity for all kinds of element is within the factor
of two in case of Cs-complex except for the elements having higher electronegativity where the
order of sensitivity is around five. The primary ion source (Cs + ) of 1.75 keV energy, and 10 nA
beam current was rastered over an area of 100 µm × 100 µm in order to get an uniform
bombardment on the surface, and the secondary ion species CCs + , OCs + , CrCs + , FeCs + , NiCs + , and
NCs + were collected with respect to time over an area of 30 µm 2 circular area. The process was