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Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...

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JUNE 26 MONDAY AFTERNOON<br />

ETCHC-MoA-INV.3 THERMAL BEHAVIOUR OF W-SI-N HARD COATINGS IN<br />

PROTECTIVE AND OXIDATION ENVIROMENTS. A. Cavaleiro, ICEMS -Faculdade de<br />

Ciências e Tecnologia da Universidade de Coimbra, Dep. Eng. Mecânica, Rua Luís Reis Santos,<br />

3030-788 Coimbra, Portugal<br />

Extensive discussion has been raised concerning the structural arrangement in TM-Si-N<br />

(TM=transition metal) nanocomposite coatings, particularly on the way how Si is present in the coatings.<br />

Furthermore, abundant results on the hardness and Young´s modulus of these films is available<br />

in the literature, particularly for TM = Ti and Zr. As a function of the phase arrangement, different<br />

interpretations and discussions on the hardening mechanisms involved in the mechanical behaviour<br />

of the coatings, have been raised such as, grain size, residual stress, lattice distortion. Many authors<br />

defend that the hardness of TM-Si-N films depends only on the purity, dimensions and distribution<br />

of the Si-N phase in relation to the TM nitride grains.<br />

W-Si-N is a particular case in the world of TM-Si-N systems (TM=Ti, Zr), due to the different<br />

chemical affinity among the elements. In fact, the affinity of N for W is much lower that the one of<br />

Si, inversely to the case of e.g. Ti-Si-N where similar affinities of Ti and Si for N are observed. Such<br />

a fact determines the arrangement of the phases during the deposition and has a huge influence on<br />

the structural stability of the coatings when annealed at increasing temperatures. The main consequences<br />

are: (1) much higher N 2 partial pressures are needed for depositing films with W-nitride<br />

phases and (2) after thermal annealing no W-nitride is detected in the films. However, the coatings of<br />

this system can also show hardness values as high as 45GPa even if the main phase (W-based) his<br />

typically a metallic bonding type based material..<br />

In this talk, the current knowledge on the thermal annealing of W-Si-N sputtered films in both protective<br />

and oxidant atmospheres is reviewed. Firstly, sputter deposited single W films are presented<br />

as a particular case of metallic element films and their thermal annealing analyzed. The transition for<br />

the W-Si-N films permitted to conclude that the addition of Si promotes a loss of the crystallinity degree<br />

until amorphous structures are reached. Generally, amorphous coatings (20-30GPa) are softer<br />

than crystalline ones (25-45GPa). Afterwards, the thermal stability of W-Si-N coatings is considered<br />

either in protective or oxidant atmospheres. Special attention is paid for amorphous films. In protective<br />

atmosphere, it is shown that after crystallization the hardness can be higher than that of asdeposited<br />

crystalline films with similar structure. The hardest films have a single W-metallic phase<br />

mixed with amorphous Si-N phase.<br />

The Si content is determinant in the oxidation resistance: the higher the Si content the lower the oxidation<br />

rate is. As an example, the weight gain reached by a coating without Si at 650ºC is similar to<br />

the one shown by a high Si content film (>30at.%) at 1000ºC. The oxidation resistance is attributed<br />

to either the formation of a continuous protective Si-rich layer or to the synergetic effect of a very<br />

low oxide grain phase and a very high compactness of the oxide scale.<br />

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