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JUNE 28 WEDNESDAY AFTERNOON RIVA-TF-WeA-P.7 GROWTH OF CRYSTAL GERMANIUM-CARBIDE BY IMPLAN- TATION . Genene Tessema 1,2 1 Faculty of Science, Department of Physics, Addis Ababa University, P.O.BOX 1<strong>17</strong>6, Addis Ababa, Ethiopia. 2 Helmholtz-Institut für Strahlen und Kernphysik, Nussalle 14-16, 53115 Bonn, Germany The interactions of carbon with probe nucleus 111 In have been studied in germanium using the perturbed angular correlation (PAC) method, which has the ability to detect the microscopic environments of the probe atom by means of the interaction of the nuclear moments of the probe and the surrounding electromagnetic fields 1,2 . At high dose carbon implantation in germanium two complexes have been identified by their unique quadrupole interaction frequencies. An interaction frequency of ν Q = 207(1) MHz (η = 0.16(3)) appeared at annealing temperatures below 650 ο C. Above 650 ο C, it was replaced by a second interaction frequency of ν Q = 500(1) MHz ( η= 0). The frequencies are attributed to two different carbon-indium pairs. The orientation of the corresponding electric field gradients and thermal stability of the defect complexes are studied. The results are found to be in good agreement with other methods 3 . 1. Th. Wichert, M. Deicher, G. Grübel, R. Keller, N. Schulz and H. Skudlik, Appl. Phys. A 48, 59 (1989) 2. G. Schatz and A. Weidinger, Nuclear Condensed Matter Physics, John Wiley and Sons, New York (1992) 3. L. Hoffmann, J. C. Bach, and B. Bech Nielsen, Phys. Rev. B ; Vol. 55(<strong>17</strong>), 11 167 (1997) 122
JUNE 28 WEDNESDAY AFTERNOON RIVA-TF-WeA-P.6 AgInTe 2 CHALCOPYRITE THIN FILMS OBTAINED BY ELECTRODEPOSITION TECHNIQUES AND ANNEALING. R. Díaz, F. Rueda Dpto. Física Aplicada Universidad Autónoma de Madrid, 28049 Madrid, Spain. P.Herrasti, E. Vazquez Dpto. Química Física Aplicada Universidad Autónoma de Madrid, 28049 Madrid, Spain. M. Abd el Lefdil Dpt de Physique, Université de Rabat, Maroc In order to obtain single phase thin films of the system Ag-In-Te for thin film solar cell applications, electrodeposition techniques followed by a baking in Te atmosphere were used. For the formation of the precursor films three alternative processes were followed, 1t) the co-electrodeposición of Ag and In, 2d) a layer of Ag with an overlayer of InTe and 3d) a layer of Ag and an overlayer of In. The vacuum annealing were done with a source of Te metal close to the films that allowed to crystallize into ternary chalcopyrite phase the as deposited amorphous films. Bath compositions, deposition potentials and deposition times have been changed to obtain the precursor thin films on substrates of molybdenum supported by glass. In order to determine the optical properties, SnO 2 coated substrates were also used. The single phase films are obtained by further annealing in Te atmosphere in the 250-400 o C range with different cooling profiles. This annealing strongly affects the Te concentration as well as the In/Ag atomic ratio and the number of phases. Single chalcopyrite phase has been obtained for specific annealing conditions and is related to Te concentration. Composition and X-ray studies have been carried out and several phases of AgInTe 2 and In-rich Telluride chalcopyrites have been found. The film morphology and unit cell parameters for single phase samples depend strongly on the composition in the annealed samples. The support of contract No CTQ2005-04469/BQU is acknowledged 121
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Sigilum Universitatis Studii Salama
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