Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...

JUNE 26 MONDAY MORNING
ETCHC-MoM-OR.8 BORON IMPLANTATION EFFECTS IN CdDS THIN FILMS
GROWN BY CHEMICAL SYNTHESIS. K. L. Narayanan, M. Yamaguchi, Toyota Technological
Institute, 2-12 Hisakata, Tempaku, Nagoya-468 8511, Japan.. R. Lozada-Morales 1 , O. Portillo-
Moreno 2 . Benemérita Universidad Autónoma de Puebla. 1 Departmento de Optoelectrónica, Facultad
de Ciencias Físico-Matemáticas. 2 Facultad de Ciencias Químicas. Puebla, México.O. Zelaya-Angel.
Departamento de Física. Centro de Investigación y de Estudios Avanzados del IPN. P.O.Box 14-740,
México 07360 D.F.
We prepared CdS thin films on ITO/glass substrates using a chemical bath, which were boronimplanted
employing 200 keV beams doses of B + ions in the range 1.0 x 10 15 – 1.0 x 10 16 ions/cm 2 .
The B-doping was successfully carried out, as was proved by the excess of carrier density introduced
in the range 0.8 x 10 18 – 5.4 x 10 18 cm -3 , which was calculated from thermopower measurements that
we made. The Raman spectroscopy results support the assumption that doubly ionized B + (B 3+ ) enter
into the CdS lattice occupying Cd 2+ sites, which create shallow donor levels in the forbidden energy
band gap, in a similar way that it happens with In 3+ ions in CdS.
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